Infineon BSC025N03MSGATMA1

Name: Infineon BSC025N03MSGATMA1
Brand: Infineon
SKU: BSC025N03MSGATMA1

30V 100A 2.5m´Î@10V30A 83W 2V@250Ã×A N Channel PG-TDSON-8 MOSFETs ROHS

$ 0.569

Obsolete

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

See all price breaks

Distributor		SKU		Min	Pkg
Arrow Electronics		BSC025N03MSGATMA1	3,796	1		0.606	0.606	0.606	0.606	0.606
Rochester Electronics		BSC025N03MSGATMA1	28,210					0.572	0.475	0.423	16h
DigiKey	2	BSC025N03MSGATMA1CT-ND	139	1	Cut Tape	1.890	1.202	0.807	0.807	0.807
Avnet		BSC025N03MSGATMA1	0	5K							4d
Farnell		BSC025N03MSGATMA1	4,029	1		1.741*	1.105*	0.741*	0.522*	0.522*	11h

Inventory History

3 month trend: -1.13%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon BSC025N03MSGATMA1.

IHS

Datasheet10 pages15 years ago

Farnell

_legacy Avnet

element14 APAC

iiiC

Inventory History

3 month trend:

-1.13%

CAD Models

Download Infineon BSC025N03MSGATMA1 symbol, footprint, and 3D STEP models from our trusted partners.

source	eCAD	FILES
Component Search Engine	SymbolFootprint	Download
EE Concierge	SymbolFootprint
SnapEDA	Footprint	Download

The partner site will open in a new tab when downloading their CAD models

By downloading CAD models from Octopart, you agree to our Terms & Conditions and Privacy Policy.

Supply Chain

Country of OriginMainland China, Malaysia

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2007-10-29

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2025-09-30

LTD Date2026-03-31

Related Parts

InfineonBSC020N03MSGATMA1

Trans MOSFET N-CH 30V 25A 8-Pin TDSON T/R

Details

InfineonBSC020N03LSGATMA1

Power MOSFET, N Channel, 30 V, 100 A, 0.0017 ohm, PG-TDSON, Surface Mount

Details

onsemiFDMS8660AS

TRANS MOSFET N-CH 30V 28A 8PIN PWR 56

Details

InfineonBSC030N03MSGATMA1

MOSFET N-CH 30V 100A TDSON-8 / Trans MOSFET N-CH 30V 21A 8-Pin TDSON EP T/R

Details

onsemiFDMS7660

N-Channel 30 V 2.8 mOhm Surface Mount Power Trench Mosfet - Power 56

Details

onsemiFDMS7660AS

N-Channel 30 V 42 A 2.4 mOhm Surface Mount PowerTrench® SyncFETTM - Power56

Details

Descriptions

Descriptions of Infineon BSC025N03MSGATMA1 provided by its distributors.

30V 100A 2.5m´Î@10V30A 83W 2V@250Ã×A N Channel PG-TDSON-8 MOSFETs ROHS

Dasenic

Trans MOSFET N-CH 30V 100A 8-Pin TDSON T/R

Avnet

2.5W(Ta),83W(Tc) 20V 2V@ 250¦ÌA 98nC@ 10 V 1N 30V 2.5m¦¸@ 30A,10V 40A 7.6nF@15V SON 5.9mm*5.15mm*1.27mm

UnikeyIC

BSC025N03 - 12V-300V N-CHANNEL P

Vigor Components

MOSFET, N CH, 100A, 30V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:30V; On Resistance Rds(on):2.1mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:83W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:100A; Power Dissipation Pd:83W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

element14 APAC

Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. OptiMOS™ 30V products are tailored to the needs of power management in notebook by improved EMI behavior, as well as increased battery life. Available in halfbridge configuration (power stage 5x6)

Infineon