Infineon BSC010N04LSATMA1
$ 0.811
Production
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SKU
Min
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Inventory History
3 month trend: -17.62%
CAD Models
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Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for Infineon BSC010N04LSATMA1.
CAD Models
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Supply Chain
Country of OriginGermany, Mainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-02-06
Lifecycle StatusProduction (Last Updated: 4 months ago)
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N-channel 40 V, 0.0043 Ohm typ., 120 A StripFET II Power MOSFET in D2PAK package
Descriptions
Descriptions of Infineon BSC010N04LSATMA1 provided by its distributors.
MOSFET Transistor, N Channel, 100 A, 40 V, 0.00085 ohm, 10 V, 2 V
Power MOSFET, N Channel, 40 V, 281 A, 1 Milliohms, TDSON-FL, 8 Pins, Surface Mount
MOSFET N-Ch 40V 38A 2.5kW Vgs=20V Qg=95nC@10V/49nC@4.5V Rds(on)=1mΩ@10V Ciss=6.8nF@20V TDSON(EP), Bracket Mount, SMD, 5.15mm×590cm×1mm
Infineon's 40V and 60V MOSFET product families feature not only the industry’s lowest RDS(on) but also a perfect switching behavior for fast switching applications. 15% lower RDS(on) and 31% lower figure of merit (RDS(on) x Qg) compared to alternative devices has been realized by advanced thin wafer technology.
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Inventory History
3 month trend: -17.62%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)38 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance1.3 mΩ
Drain to Source Voltage (Vdss)40 V
Fall Time9 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance6.8 nF
Max Dual Supply Voltage40 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation139 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance1 mΩ
Package Quantity5000
PackagingTape & Reel
Power Dissipation2.5 W
Rds On Max1 mΩ
Rise Time12 ns
Schedule B8541290080
Threshold Voltage1.2 V
Turn-Off Delay Time46 ns
Turn-On Delay Time10 ns
Dimensions
Height1.1 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for Infineon BSC010N04LSATMA1.
Compliance
Environmental Classification
China RoHSNon-Compliant
Halogen FreeHalogen Free
Lead FreeContains Lead
REACH SVHCAffected
RoHSCompliant
Compliance Statements