onsemi FDB9406-F085
N-Channel PowerTrench® MOSFET, 40 V, 110 A, 1.8 mΩ
$ 1.53
EOL
Price and Stock
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Inventory History
3 month trend: -1.98%
CAD Models
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Alternate Parts
0 parts available
CAD Models
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Supply Chain
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2013-02-04
Lifecycle StatusEOL (Last Updated: 4 days ago)
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 4 days ago)
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Descriptions
Descriptions of onsemi FDB9406-F085 provided by its distributors.
N-Channel PowerTrench® MOSFET, 40 V, 110 A, 1.8 mΩ
Trans MOSFET N-CH 40V 110A Automotive 3-Pin(2+Tab) D2PAK T/R
Power Field-Effect Transistor, 110A I(D), 40V, 0.0018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
40V 110A 1.31m´Î@10V80A 176W 2.83V@250uA 140pF@25V N Channel 7.71nF@25V 107nC@0~10V -55¡Í~+175¡Í@(Tj) TO-263 MOSFETs ROHS
176W(Tj) 20V 4V@ 250µA 138nC@ 10 V 1individualNChannel 40V 1.8mΩ@ 80A,10V 110A 7.71nF@25V TO-263 SMD mount 10.67mm*9.65mm*4.83mm
Chip Resistor - Surface Mount 1MOhm 0603 (1608 Metric) ±1% ±100ppm/°C Thick Film Tape & Reel (TR) 2 1 (Unlimited) ERJ RES SMD 1M OHM 1% 1/10W 0603
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Inventory History
3 month trend: -1.98%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Terminals2
Weight1.31247 g
Technical
Continuous Drain Current (ID)110 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance1.8 mΩ
Drain to Source Voltage (Vdss)40 V
Element ConfigurationSingle
Fall Time20 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance7.71 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation176 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation176 W
Rds On Max1.8 mΩ
Rise Time48 ns
Turn-Off Delay Time50 ns
Turn-On Delay Time32 ns
Dimensions
Height5.08 mm
Compliance
Environmental Classification
China RoHSNon-Compliant
Radiation HardeningNo
RatingsAEC-Q101
REACH SVHCNo
RoHSCompliant
Compliance Statements