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Infineon AUIRLS4030

MOSFET N-CH 100V 180A D2PAK / N-Channel 100 V 180A (Tc) 370W (Tc) Surface Mount PG-TO263-3
$ 23.55
Obsolete

Price and Stock

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon AUIRLS4030.

IHS

Datasheet11 pages10 years ago
Datasheet13 pages12 years ago

element14 APAC

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Alternate Parts

Price @ 1000
$ 23.55
$ 1.465
$ 1.465
Stock
78,977
353,864
353,864
Authorized Distributors
1
6
6
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
D2PAK
D2PAK
Drain to Source Voltage (Vdss)
100 V
100 V
100 V
Continuous Drain Current (ID)
180 A
180 A
180 A
Threshold Voltage
-
-
-
Rds On Max
4.3 mΩ
4.3 mΩ
4.3 mΩ
Gate to Source Voltage (Vgs)
16 V
16 V
16 V
Power Dissipation
370 W
370 W
370 W
Input Capacitance
11.36 nF
11.36 nF
11.36 nF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-08-17
Lifecycle StatusObsolete (Last Updated: 5 months ago)

Related Parts

InfineonIRF100S201
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
AUIRFS3107 Series 75 V 195 A 370 W SMT HEXFET® Power MOSFET - D2PAK-3
75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
STMicroelectronicsSTH180N10F3-2
N-channel 100 V, 3.9 mOhm typ., 180 A STripFET F3 Power MOSFET in H2PAK-2 package
STMicroelectronicsSTH310N10F7-2
N-channel 100 V, 1.9 mOhm typ., 180 A STripFET F7 Power MOSFET in H2PAK-2 package
STMicroelectronicsSTH315N10F7-2
Automotive-grade N-channel 100 V, 2.1 mOhm typ., 180 A STripFET F7 Power MOSFET

Descriptions

Descriptions of Infineon AUIRLS4030 provided by its distributors.

MOSFET N-CH 100V 180A D2PAK / N-Channel 100 V 180A (Tc) 370W (Tc) Surface Mount PG-TO263-3
Automotive Q101 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package, D2PAK-3, RoHS
Infineon SCT
Trans MOSFET N-CH 100V 180A Automotive 3-Pin(2+Tab) D2PAK Tube
Transistor MOSFET N-ch 100V 130A D2PAK
AUTOMOTIVE GRADE HEXFET POWER MOSFET Power Field-Effect Transistor, 180A I(D), 100V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N-CH, 100V, 180A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:180A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0034ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:370W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-263; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +175°C
Benefits: Advanced process technology; Ultra-low on-resistance; 175C operating temperature; Fast switching; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified | Target Applications: Exhaust

Manufacturer Aliases

Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Part Number Aliases

This part may be known by these alternate part numbers:

  • SP001519902