STMicroelectronics STH180N10F3-2
$ 2.059
Production
Inventory History
3 month trend: -4.28%
CAD Models
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Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STH180N10F3-2.
CAD Models
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Descriptions
Descriptions of STMicroelectronics STH180N10F3-2 provided by its distributors.
N-channel 100 V, 3.9 mOhm typ., 180 A STripFET F3 Power MOSFET in H2PAK-2 package
STH180N10F3-2 N-channel MOSFET Transistor, 180 A, 100 V, 3-Pin H2PAK-2
Power MOSFET, N Channel, 100 V, 180 A, 0.0039 ohm, H2PAK-2, Surface Mount
MOSFET, N CH, 100V, 120A, H2PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 180A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0039ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Po
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: -4.28%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-263-3
MountSurface Mount
Number of Pins4
Number of Terminals2
Technical
Continuous Drain Current (ID)180 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance4 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time6.9 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance6.665 nF
Max Operating Temperature175 °C
Max Power Dissipation315 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
Power Dissipation315 W
Rds On Max4.5 mΩ
Resistance4.5 MΩ
Rise Time97.1 ns
Schedule B8541290080
Threshold Voltage2 V
Turn-Off Delay Time99.9 ns
Turn-On Delay Time25.6 ns
Dimensions
Height4.8 mm
Length15.8 mm
Width10.4 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STH180N10F3-2.
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant