Diodes Inc. ZXMN20B28KTC
$ 0.554
NRND
Price and Stock
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Distributor
SKU
Min
Pkg
Bulk Pricing
Datasheets & Documents
Download datasheets and manufacturer documentation for Diodes Inc. ZXMN20B28KTC.
Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-10-13
Lifecycle StatusNRND (Last Updated: 2 months ago)
Related Parts
InfineonIRFR220NPBF
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 600 Milliohms;ID 5A;D-Pak (TO-252AA);PD 43W
InfineonIRFR220NTRPBF
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 600 Milliohms;ID 5A;D-Pak (TO-252AA);PD 43W
InfineonIRFR220NTRLPBF
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 600 Milliohms;ID 5A;D-Pak (TO-252AA);PD 43W
Descriptions
Descriptions of Diodes Inc. ZXMN20B28KTC provided by its distributors.
N-Channel 200 V 750 mO 8.1 nC Surface Mount Mosfet - TO-252
Trans MOSFET N-CH 200V 2.3A 3-Pin(2+Tab) TO-252 T/R
N-CHANNEL ENHANCEMENT MODE MOSFET, 200 V, RoHS
Diodes Inc SCT
MOSFET N-Channel 200V 2.3A TO252
DiodesZetex NChannel EnhancedMOSTube, Vds=200 V, 2.3 A, DPAK (TO-252)encapsulation, surface mount, 3Pin
Power Field-Effect Transistor, 1.5A I(D), 200V, 0.78ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET, N-CH, 200V, 1.5A, TO-252;
Manufacturer Aliases
Diodes Inc. has several brands around the world that distributors may use as alternate names. Diodes Inc. may also be known as the following names:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
Technical Specifications
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight3.949996 g
Technical
Continuous Drain Current (ID)1.5 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance780 mΩ
Drain to Source Voltage (Vds)200 V
Element ConfigurationSingle
Fall Time57.1 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance358 pF
Max Operating Temperature150 °C
Max Power Dissipation10.2 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Rds On Max750 mΩ
Rise Time76.9 ns
Turn-Off Delay Time44.7 ns
Turn-On Delay Time17.8 ns
Dimensions
Height2.39 mm
Length6.73 mm
Width6.22 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for Diodes Inc. ZXMN20B28KTC.
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCAffected
RoHSCompliant
Compliance Statements