Diodes Inc. ZTX857

Name: Diodes Inc. ZTX857
Brand: Diodes Inc.
SKU: ZTX857

Power Bipolar Transistor, 3A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin

$ 0.689

Production

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

See all price breaks

Distributor		SKU		Min	Pkg
Newark		ZTX857	2,137	1		1.960	1.320	0.941	0.732	0.681
DigiKey		ZTX857-ND	4,981	1	Bulk	2.180	1.396	0.944	0.689	0.555
TME	2	ZTX857	0	1		1.716	1.093	0.734	0.538	0.519	19h
Avnet		ZTX857	0	4K						0.485	8h
Arrow Electronics		ZTX857	0	4K						0.581

Inventory History

3 month trend: -3.43%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Diodes Inc. ZTX857.

Newark

Datasheet3 pages19 years ago

IHS

Diodes Inc SCT

Future Electronics

Inventory History

3 month trend:

-3.43%

CAD Models

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Alternate Parts

This Part

Alternate Parts

Diodes Inc.ZTX857

Diodes Inc.ZTX857STZ

Price @ 1000

$ 0.689

$ 0.575

Stock

228,262

44,187

Authorized Distributors

Mount

Through Hole

Surface Mount, Through Hole

Case/Package

TO-92

Polarity

NPN

Collector Emitter Breakdown Voltage

300 V

Max Collector Current

3 A

Transition Frequency

80 MHz

Collector Emitter Saturation Voltage

250 mV

hFE Min

100

Power Dissipation

1.2 W

Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1994-01-01

Lifecycle StatusProduction (Last Updated: 4 months ago)

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Details

Descriptions

Descriptions of Diodes Inc. ZTX857 provided by its distributors.

Power Bipolar Transistor, 3A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin

IHS

ZTX857 Series NPN 5 A 300 V Silicon Planar Medium Power Transistor - TO-92-3

Future Electronics

250mV@ 600mA,3A NPN 1.2W 6V 50nA 330V 300V 3A TO-92 , 4.77mm*2.41mm*4.01mm

UnikeyIC

Bipolar Transistors - BJT NPN Big Chip SELine

Digi-ic_SMART PIONEER

TRANSISTOR, NPN, E-LINE; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:300V; Transition Frequency Typ ft:80MHz; Power Dissipation Pd:1.2W; DC Collector Current:3A; DC Current Gain hFE:200; Transistor Case Style:E-Line; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:250mV; Continuous Collector Current Ic Max:3A; Current Ic @ Vce Sat:3A; Current Ic Continuous a Max:3A; Current Ic hFE:1A; Full Power Rating Temperature:25°C; Gain Bandwidth ft Typ:80MHz; Hfe Min:100; No. of Transistors:1; Package / Case:E-Line; Power Dissipation Pd:1.2W; Power Dissipation Ptot Max:1.2W; Termination Type:Through Hole; Voltage Vcbo:330V

element14 APAC