Diodes Inc. ZTX694B

Name: Diodes Inc. ZTX694B
Brand: Diodes Inc.
SKU: ZTX694B

ZTX694 Series 120V 500mA Through hole Bipolar (BJT) Transistor - TO-92-3

$ 0.461

Production

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

See all price breaks

Distributor		SKU		Min	Pkg
Newark		ZTX694B	526	1		1.580	1.050	0.738	0.563	0.518
DigiKey		ZTX694B-ND	4,646	1	Bulk	1.540	0.972	0.646	0.461	0.364
TME	2	ZTX694B	0	1		1.411	0.890	0.591	0.426	0.357	18h
Avnet		ZTX694B	0	4K						0.348	5h
RS (Formerly Allied Electronics)		ZTX694B	0	50	Bulk			2.690	2.690	2.690	17h

Inventory History

3 month trend: -2.13%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Diodes Inc. ZTX694B.

Newark

Datasheet3 pages19 years ago

IHS

Diodes Inc SCT

Inventory History

3 month trend:

-2.13%

CAD Models

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Alternate Parts

This Part

Alternate Parts

Diodes Inc.ZTX694B

Diodes Inc.ZTX694BSTZ

Price @ 1000

$ 0.461

Stock

58,624

360,194

Authorized Distributors

Mount

Through Hole

Case/Package

TO-92

Polarity

NPN

Collector Emitter Breakdown Voltage

120 V

Max Collector Current

500 mA

Transition Frequency

130 MHz

Collector Emitter Saturation Voltage

500 mV

hFE Min

150

Power Dissipation

1 W

Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1992-02-01

Lifecycle StatusProduction (Last Updated: 5 months ago)

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Descriptions

Descriptions of Diodes Inc. ZTX694B provided by its distributors.

ZTX694 Series 120V 500mA Through hole Bipolar (BJT) Transistor - TO-92-3

Future Electronics

Small Signal Bipolar Transistor, 0.5A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon

IHS

500mV@ 5mA,400mA NPN 1W 5V 100nA 120V 120V 500mA EP-3SC , 4.77mm*2.41mm*4.01mm

Unikeyic (ICkey)

TRANSISTOR, NPN, E-LINE; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:120V; Transition Frequency Typ ft:130MHz; Power Dissipation Pd:1W; DC Collector Current:500mA; DC Current Gain hFE:500; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:E-Line; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:500mV; Continuous Collector Current Ic Max:500mA; Current Ic @ Vce Sat:400mA; Current Ic Continuous a Max:500mA; Current Ic hFE:200mA; Full Power Rating Temperature:25°C; Gain Bandwidth ft Min:130MHz; Gain Bandwidth ft Typ:130MHz; Hfe Min:400; No. of Transistors:1; Package / Case:E-Line; Power Dissipation Pd:1W; Power Dissipation Ptot Max:1W; Pulsed Current Icm:1A; Termination Type:Through Hole; Voltage Vcbo:120V

element14 APAC