Diodes Inc. DMN63D8LDWQ-7

Name: Diodes Inc. DMN63D8LDWQ-7
Brand: Diodes Inc.
SKU: DMN63D8LDWQ-7

Trans MOSFET N-CH 30V 0.26A Automotive 6-Pin SOT-363 T/R

$ 0.086

NRND

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor		SKU		Min	Pkg
Newark		DMN63D8LDWQ-7	310	1	Cut Tape	0.315	0.197	0.129	0.090	0.090
TME	2	DMN63D8LDWQ-7	4,555	1		0.170	0.119	0.069	0.047	0.044	8h
DigiKey	3	DMN63D8LDWQ-7DICT-ND	1,576	1	Cut Tape	0.340	0.209	0.131	0.086	0.086
Future Electronics	2	DMN63D8LDWQ-7	0	3K	Tape & Reel					0.104
Avnet		DMN63D8LDWQ-7	0	3K						0.043	20h

Inventory History

3 month trend: -43.72%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Diodes Inc. DMN63D8LDWQ-7.

IHS

Datasheet6 pages3 years ago

Newark

Diodes Inc SCT

TME

Inventory History

3 month trend:

-43.72%

CAD Models

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Alternate Parts

This Part

Alternate Parts

Diodes Inc.DMN63D8LDWQ-7

Diodes Inc.DMN63D8LDW-7

Price @ 1000

$ 0.086

$ 0.069

Stock

659,770

1,910,135

Authorized Distributors

Mount

Surface Mount

Case/Package

SOT-363

Drain to Source Voltage (Vdss)

30 V

Continuous Drain Current (ID)

220 mA

Threshold Voltage

1.5 V

Rds On Max

2.8 Ω

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

300 mW

Input Capacitance

22 pF

Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2014-08-07

Lifecycle StatusNRND (Last Updated: 4 months ago)

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Descriptions

Descriptions of Diodes Inc. DMN63D8LDWQ-7 provided by its distributors.

Trans MOSFET N-CH 30V 0.26A Automotive 6-Pin SOT-363 T/R

Future Electronics

MOSFET 2N-CH 30V 0.22A SOT363 / Mosfet Array 2 N-Channel (Dual) 30V 220mA 300mW Surface Mount SOT-363

Win Source

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 20±V VGS

Diodes Inc SCT

Small Signal Field-Effect Transistor, 0.22A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

IHS

MOSFET, DUAL, N-CH, 30V, 0.22A;

Farnell

场效应管, MOSFET, 双路, N沟道, 30V, 0.22A;

element14 APAC

MOSFET, N-CH, 30V, 0.22A, SOT-363; Channel Type:N Channel; Drain Source Voltage Vds N Channel:30V; Drain Source Voltage Vds P Channel:-; Continuous Drain Current Id N Channel:220mA; Continuous Drain Current Id P Channel:- RoHS Compliant: Yes

Newark