Diodes Inc. BCX5316TA

Name: Diodes Inc. BCX5316TA
Brand: Diodes Inc.
SKU: BCX5316TA

Bipolar (BJT) Single Transistor, PNP, 80 V, 500 mA, 1 W, SOT-89, Surface Mount

$ 0.08

Production

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

See all price breaks

Distributor		SKU	Min	Pkg
TME	2	BCX5316TA	1		0.365	0.316	0.170	0.080	0.065	13h
Newark	2	BCX5316TA	1	Cut Tape	0.489	0.296	0.187	0.142	0.142
Future Electronics	2	BCX5316TA	1K	Tape & Reel				0.080	0.075
RS (Formerly Allied Electronics)		BCX5316TA	50	Bulk			0.370	0.326	0.326	2h
Avnet		BCX5316TA	1K					0.049	0.047	5d

Inventory History

3 month trend: -100%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Diodes Inc. BCX5316TA.

Newark

Datasheet7 pages4 years ago

Datasheet7 pages10 years ago

element14 APAC

TME

Diodes Inc SCT

Future Electronics

Inventory History

3 month trend:

-100%

CAD Models

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Alternate Parts

This Part

Alternate Parts

Diodes Inc.BCX5316TA

NexperiaBCX53-16,115

Price @ 1000

$ 0.08

$ 0.216

Stock

956,647

3,610,041

Authorized Distributors

Mount

Surface Mount

Case/Package

SOT-89

SOT

Polarity

PNP

Collector Emitter Breakdown Voltage

-80 V

80 V

Max Collector Current

1 A

Transition Frequency

150 MHz

145 MHz

Collector Emitter Saturation Voltage

500 mV

-500 mV

hFE Min

100

Power Dissipation

1 W

1.35 W

Supply Chain

Lifecycle StatusProduction (Last Updated: 1 month ago)

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Descriptions

Descriptions of Diodes Inc. BCX5316TA provided by its distributors.

Bipolar (BJT) Single Transistor, PNP, 80 V, 500 mA, 1 W, SOT-89, Surface Mount

Avnet Silica

Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin

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Future Electronics

General Purpose Transistors PNP Ic=1A Vceo=80V hfe=40~250 P=2W SOT89

HQonline

Bipolar Transistors - BJT PNP Medium Power

Jak Electronics

TRANSISTOR, PNP, 80V, SOT-89; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency Typ ft:150MHz; Power Dissipation Pd:1W; DC Collector Current:500mA; DC Current Gain hFE:100; Operating Temperature Range:-65°C to +150°C; Transistor Case Style:SOT-89; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:500mV; Continuous Collector Current Ic Max:1A; Current Ic Continuous a Max:1A; Current Ic hFE:150mA; Gain Bandwidth ft Min:150MHz; Gain Bandwidth ft Typ:150MHz; Hfe Min:100; Package / Case:SOT-89; Power Dissipation Pd:1W; Power Dissipation Ptot Max:1W; Pulsed Current Icm:1.5A; Termination Type:SMD; Voltage Vcbo:100V

element14 APAC