관련 부품
InfineonIRFR3709ZTRPBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 5.2Milliohms;ID 86A;D-Pak (TO-252AA);PD 79W
InfineonIRFR3709ZTRLPBF
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
InfineonIRFR3709ZPBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 5.2Milliohms;ID 86A;D-Pak (TO-252AA);PD 79W
설명
유통업체에서 제공한 STMicroelectronics STD95N04에 대한 설명입니다.
N-CHANNEL 40V - 5.4mohm - 80A - DPAK - TO-220 STripFET Power MOSFET
Power MOSFET Transistors STripFET MOSFET
Power Field-Effect Transistor, 80A I(D), 40V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Transistor; Continuous Drain Current, Id:80A; Drain Source Voltage, Vds:40V; On Resistance, Rds(on):0.0054ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:4V; Power Dissipation, Pd:110W ;RoHS Compliant: Yes
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Terminals2
Technical
Continuous Drain Current (ID)80 A
Current Rating80 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance6.5 mΩ
Drain to Source Voltage (Vdss)40 V
Element ConfigurationSingle
Fall Time15 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.2 nF
Max Operating Temperature175 °C
Max Power Dissipation110 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingDigi-Reel®
Power Dissipation110 W
Rds On Max6.5 mΩ
Rise Time50 ns
Turn-Off Delay Time40 ns
Voltage Rating (DC)40 V