공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2001-08-15
Lifecycle StatusObsolete (Last Updated: 1 week ago)
LTB Date2021-10-08
LTD Date2022-04-08
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 1 week ago)
관련 부품
InfineonIRFR3709ZTRPBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 5.2Milliohms;ID 86A;D-Pak (TO-252AA);PD 79W
설명
유통업체에서 제공한 onsemi FDD6688에 대한 설명입니다.
Transistor,mosfet,n-Channel,30V V(Br)Dss,84A I(D),to-252Aa Rohs Compliant: Yes |Onsemi FDD6688
N-Channel PowerTrench® MOSFET, 30V, 84A, 5mΩ
Single N-Channel 30 V 10 mOhm 56 nC 83 W PowerTrench SMT Mosfet - TO-252-3
Power Field-Effect Transistor, 84A I(D), 30V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
Transistors - IGBTs - Modules 1 (Unlimited) Half Bridge Module No Standard Chassis Mount 6.5V @ 15V, 150A 1mA -40°C~150°C TJ POWEREX CM150DU-24NFH IGBT MODULE, 1.2KV, 150A
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight260.37 mg
Technical
Continuous Drain Current (ID)84 A
Current Rating84 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance5 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time36 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.845 nF
Max Operating Temperature175 °C
Max Power Dissipation83 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation83 W
Rds On Max5 mΩ
Rise Time13 ns
Turn-Off Delay Time62 ns
Turn-On Delay Time15 ns
Voltage Rating (DC)30 V
규정 준수
환경 분류
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
규정 준수 정책