대체 부품
Price @ 1000
$ 0.442
$ 0.407
$ 0.407
Stock
3,751,727
162,497
162,497
Authorized Distributors
6
2
2
Mount
Surface Mount
-
-
Case/Package
DPAK
-
-
Drain to Source Voltage (Vdss)
30 V
-
-
Continuous Drain Current (ID)
17 A
50 A
50 A
Threshold Voltage
2.5 V
-
-
Rds On Max
5.7 mΩ
-
-
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
80 W
125 W
125 W
Input Capacitance
2.525 nF
-
-
공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2003-11-04
Lifecycle StatusEOL (Last Updated: 3 days ago)
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)
관련 부품
설명
유통업체에서 제공한 onsemi FDD8896에 대한 설명입니다.
TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,17A I(D),TO-252AA
PowerTrench® MOSFET, N-Channel, 30V, 94A, 4.7mΩ
N-CHANNEL POWERTRENCH MOSFET Power Field-Effect Transistor, 17A I(D), 30V, 0.068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageDPAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight260.37 mg
Technical
Continuous Drain Current (ID)17 A
Current Rating94 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance68 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time41 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.525 nF
Max Operating Temperature175 °C
Max Power Dissipation80 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation80 W
Rds On Max5.7 mΩ
Resistance5.7 MΩ
Rise Time106 ns
Schedule B8541290080
Threshold Voltage2.5 V
Turn-Off Delay Time53 ns
Turn-On Delay Time9 ns
Voltage Rating (DC)30 V
Dimensions
Height2.39 mm
Length6.73 mm
Width6.22 mm
규정 준수
환경 분류
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
규정 준수 정책