공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2003-02-14
Lifecycle StatusObsolete (Last Updated: 7 months ago)
LTB Date2014-10-25
LTD Date2015-04-25
관련 부품
설명
유통업체에서 제공한 Infineon IRLR8113PBF에 대한 설명입니다.
MOSFET, N Ch., 30V, 94A, 6 MOHM, 22 NC QG, D-PAK, Pb-Free
HEXFET POWER MOSFET Power Field-Effect Transistor, 30A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET, N, 30V, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:94A; Drain Source Voltage Vds:30V; On Resistance Rds(on):6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.25V; Power Dissipation Pd:89mW; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Base Number:8113; Current Id Max:94A; Package / Case:DPAK; Power Dissipation Pd:89mW; Pulse Current Idm:380A; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:2.25V; Voltage Vgs Rds on Measurement:10V
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기술 사양
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)30 A
Current Rating94 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance6 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time10 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.92 nF
Max Operating Temperature175 °C
Max Power Dissipation89 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements1
Rds On Max6 mΩ
Recovery Time49 ns
Resistance6 MΩ
Rise Time3.8 ns
Threshold Voltage2.25 V
Turn-Off Delay Time15 ns
Turn-On Delay Time9.2 ns
Voltage Rating (DC)30 V
Dimensions
Height2.3876 mm
Length6.7056 mm
Width6.22 mm