가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Rochester Electronics | IRFR3709ZTRPBF | 2,142 | 16h | |||||||||
| RS (Formerly Allied Electronics) | IRFR3709ZTRPBF | 0 | 2K | Bulk | 9h | |||||||
| Farnell | IRFR3709ZTRPBF | 0 | 1 | Cut Tape | 16h | |||||||
| Win Source | WS-IRFR3709ZTRPBF | 5,520 | 80 | 17h | ||||||||
| Worldway Electronics | IRFR3709ZTRPBF | 16,406 | 7 | Tape & Reel | 16h |
공급망
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2004-03-03
Lifecycle StatusObsolete (Last Updated: 4 months ago)
관련 부품
InfineonIRLR8726TRLPBF
N CH POWER MOSFET, HEXFET, 30V, 86A, DPAK; Transistor Polarity:N Channel; Contin
설명
유통업체에서 제공한 Infineon IRFR3709ZTRPBF에 대한 설명입니다.
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 5.2Milliohms;ID 86A;D-Pak (TO-252AA);PD 79W
Single N-Channel 30 V 6.5 mOhm 17 nC HEXFET® Power Mosfet - TO-252AA
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 30A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:86A; On Resistance, Rds(on):8.2mohm; Rds(on) Test Voltage, Vgs:20V; Package/Case:D-Pak ;RoHS Compliant: Yes
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)30 A
Current Rating86 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance6.5 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time3.9 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.33 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation79 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1.8 V
Number of Channels1
Number of Elements1
On-State Resistance6.5 mΩ
Package Quantity2000
PackagingTape & Reel
Power Dissipation79 W
Rds On Max6.5 mΩ
Resistance6.5 MΩ
Rise Time12 ns
Schedule B8541290080
Turn-Off Delay Time15 ns
Turn-On Delay Time12 ns
Voltage Rating (DC)30 V
Dimensions
Height2.52 mm
Length6.7056 mm
Width6.22 mm
규정 준수
환경 분류
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
규정 준수 정책