공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2001-06-05
Lifecycle StatusProduction (Last Updated: 4 months ago)
관련 부품
InfineonIPW60R190C6FKSA1
151W 20V 3.5V 63nC@ 10V 1N 600V 190m¦¸@ 10V 20.2A 1.4nF@ 100V 15.9mm*5.03mm*20.9mm
InfineonSPW20N60S5FKSA1
Single N-Channel 600 V 190 mOhm 79 nC CoolMOS Power Mosfet - TO-247-3, PG-TO247-3, RoHS
VishaySIHG22N60E-GE3
E-Series N-Channel 600 V 227 W 0.18 O 86 nC Flange Mount Power Mosfet - TO-247AC
VishaySIHG22N60E-E3
MOSFET, N CH, 600V, 21A, TO-247AC; Transistor Polarity:N Channel; Continuous Dra
설명
유통업체에서 제공한 Infineon SPW17N80C3FKSA1에 대한 설명입니다.
Trans MOSFET N-CH 800V 17A 3-Pin(3+Tab) TO-247 Tube
Power Field-Effect Transistor, 17A I(D), 800V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
MOSFET, N, COOLMOS, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:800V; On Resistance Rds(on):290mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:208W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Cont Current Id @ 25°C:17A; Current Id Max:17A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:1; Package / Case:TO-247; Power Dissipation Pd:208W; Power Dissipation Pd:208W; Power Dissipation Ptot Max:208W; Pulse Current Idm:51A; Termination Type:Through Hole; Voltage Vds:800V; Voltage Vds Typ:800V; Voltage Vgs Max:3V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3.9V
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 17 / Drain-Source Voltage (Vds) V = 800 / ON Resistance (Rds(on)) mOhm = 290 / Gate-Source Voltage V = 20 / Fall Time ns = 5.5 / Rise Time ns = 45 / Turn-OFF Delay Time ns = 88 / Turn-ON Delay Time ns = 25 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = TO-247 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 208
800V CoolMOS C3 is Infineon's third series of CoolMOS with market entry in 2001. C3 is the "working horse" of the portfolio. | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Consumer; PC power; Adapter; Lighting; Solar
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-247-3
Contact PlatingTin
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)17 A
Current17 A
Current Rating17 A
Drain to Source Breakdown Voltage800 V
Drain to Source Resistance290 mΩ
Drain to Source Voltage (Vdss)800 V
Element ConfigurationSingle
Fall Time6 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.32 nF
Max Operating Temperature150 °C
Max Power Dissipation208 W
Min Breakdown Voltage800 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance290 mΩ
Package Quantity240
Power Dissipation208 W
Rds On Max290 mΩ
Rise Time15 ns
Schedule B8541290080
Threshold Voltage3 V
Turn-Off Delay Time72 ns
Turn-On Delay Time25 ns
Voltage800 V
Voltage Rating (DC)800 V
Dimensions
Height21.1 mm
Length16.13 mm
Width5.21 mm