공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-04-13
Lifecycle StatusNRND (Last Updated: 4 months ago)
관련 부품
STMicroelectronicsSTW25NM60ND
N-channel 600 V, 0.13 Ohm typ., 21 A FDmesh(TM) II Power MOSFET (with fast diode) in TO-247 package
InfineonIPW60R160P6FKSA1
Power MOSFET, N Channel, 600 V, 23.8 A, 160 mOhm, TO-247, 3 Pins, Through Hole
STMicroelectronicsSTW28N60M2
N-channel 600 V, 0.135 Ohm typ., 22 A MDmesh M2 Power MOSFETs in TO-247 package
VishaySIHG22N60S-E3
250W 30V 4V 75nC@ 10V 1N 600V 190m¦¸@ 10V 22A 2.81nF@ 25V TO-247 15.87mm*5.31mm*20.82mm
설명
유통업체에서 제공한 Infineon SPW20N60S5FKSA1에 대한 설명입니다.
Single N-Channel 600 V 190 mOhm 79 nC CoolMOS Power Mosfet - TO-247-3, PG-TO247-3, RoHS
Infineon SCT
TRANSISTOR, MOSFET, N-CHANNEL, 600V, 0.19 OHM, 20A, TO247, COOLMOS POWER
Infineon Technologies N channel CoolMOS power transistor, 600 V, 20 A, TO-247, SPW20N60S5FKSA1
MOSFET Operating temperature: -55...150 °C Housing type: TO-247 Polarity: N Variants: Enhancement mode Power dissipation: 208 W
Power Field-Effect Transistor, 20A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3
Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:20A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4.5V; Power Dissipation:208W; No. Of Pins:3Pins Rohs Compliant: Yes |Infineon Technologies SPW20N60S5FKSA1.
Summary of Features: Innovative high voltage technology; Worldwide best R DS(on) in TO-251 and TO-252; Ultra low gate charge; Periodic avalanche rated; Extreme dv/dt rated; Ultra low effective capacitances; Improved transconductance
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-247
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)20 A
Current Rating20 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance190 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time30 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3 nF
Max Dual Supply Voltage600 V
Max Operating Temperature150 °C
Max Power Dissipation208 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance190 mΩ
Package Quantity240
Power Dissipation208 W
Rds On Max190 mΩ
Rise Time25 ns
Schedule B8541290080
Threshold Voltage4.5 V
Turn-Off Delay Time130 ns
Turn-On Delay Time120 ns
Voltage Rating (DC)650 V
Dimensions
Height20.95 mm
Length15.9 mm
Width5.3 mm
규정 준수
환경 분류
China RoHSCompliant
Lead FreeContains Lead
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
규정 준수 정책