공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2008-02-21
Lifecycle StatusNRND (Last Updated: 4 months ago)
LTB Date2020-12-31
LTD Date2021-06-30
관련 부품
InfineonSPW17N80C3FKSA1
Infineon Technologies N channel CoolMOS power transistor, 800 V, 17 A, TO-247, SPW17N80C3
STMicroelectronicsSTW23N85K5
N-channel 850 V, 0.2 Ohm typ., 19 A MDmesh K5 Power MOSFET in a TO-247 package
STMicroelectronicsSTW23N80K5
N-channel 800 V, 0.23 Ohm typ., 16 A MDmesh K5 Power MOSFET in a TO-247 package
STMicroelectronicsSTW25N80K5
N-channel 800 V, 0.19 Ohm typ., 19.5 A SuperMESH(TM) 5 Power MOSFET in TO-247 package
설명
유통업체에서 제공한 Infineon IPW90R340C3XKSA1에 대한 설명입니다.
Power Transistor MOSFET N-Channel Enhancement 900V 15A 3-Pin TO-247
Power Field-Effect Transistor, 15A I(D), 900V, 0.34ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
Mosfet, N Ch, 900V, 15A, To-247-3; Transistor Polarity:n Channel; Drain Source Voltage Vds:900V; Continuous Drain Current Id:15A; On Resistance Rds(On):0.28Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes
900V CoolMOS C3 is Infineon's third series of CoolMOS with market entry in 2001. C3 is the "working horse" of the portfolio. | Summary of Features: Low specific on-state resistance (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Consumer; PC power; Adapter; Lighting
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-247-3
Contact PlatingTin
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)15 A
Drain to Source Breakdown Voltage900 V
Drain to Source Resistance340 mΩ
Drain to Source Voltage (Vdss)900 V
Dual Supply Voltage900 V
Element ConfigurationSingle
Fall Time25 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.4 nF
Max Operating Temperature150 °C
Max Power Dissipation208 W
Min Breakdown Voltage900 V
Min Operating Temperature-55 °C
Nominal Vgs3 V
Number of Elements1
On-State Resistance340 mΩ
Package Quantity240
Power Dissipation208 W
Rds On Max340 mΩ
Rise Time20 ns
Schedule B8541290080
TerminationThrough Hole
Turn-Off Delay Time400 ns
Turn-On Delay Time70 ns
Dimensions
Height21.1 mm
Length16.13 mm
Width5.21 mm