공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-05-03
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2024-11-04
LTD Date2025-05-04
관련 부품
VishaySIHG22N50D-GE3
VISHAY SIHG22N50D-GE3 MOSFET Transistor, N Channel, 22 A, 500 V, 0.185 ohm, 10 V, 3 V
STMicroelectronicsSTW19NM60N
Automotive-grade N-channel 600 V, 0.26 Ohm, 13 A MDmesh(TM) II Power MOSFET in TO-247 package
설명
유통업체에서 제공한 Vishay SIHG17N60D-GE3에 대한 설명입니다.
Trans MOSFET N-CH 600V 17A 3-Pin(3+Tab) TO-247AC
POWER MOSFET Power Field-Effect Transistor, 17A I(D), 600V, 0.34ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
MOSFET, N-CH, 600V, 17A, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.275ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:277.8W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-247AC; No. of Pins:3; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C
제조업체 별칭
Vishay에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Vishay는 다음 이름으로도 알려져 있습니다:
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기술 사양
Physical
Case/PackageTO-247-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight38.000013 g
Technical
Continuous Drain Current (ID)17 A
Drain to Source Resistance340 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time30 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.78 nF
Max Operating Temperature150 °C
Max Power Dissipation277.8 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingBulk
Rds On Max340 mΩ
Rise Time56 ns
Threshold Voltage3 V
Turn-Off Delay Time37 ns
Turn-On Delay Time22 ns
Dimensions
Height20.82 mm
Length15.87 mm
Width5.31 mm