공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-06-19
Lifecycle StatusNRND (Last Updated: 4 months ago)
관련 부품
InfineonSPW24N60C3FKSA1
Trans MOSFET N-CH 650V 24.3A 3-Pin(3+Tab) TO-247 Tube / MOSFET N-CH 650V 24.3A TO-247
VishaySIHG22N60E-GE3
E-Series N-Channel 600 V 227 W 0.18 O 86 nC Flange Mount Power Mosfet - TO-247AC
VishaySIHG22N60E-E3
MOSFET, N CH, 600V, 21A, TO-247AC; Transistor Polarity:N Channel; Continuous Dra
STMicroelectronicsSTW26NM60ND
N-channel 600 V, 0.145 Ohm typ., 21 A FDmesh(TM) II Power MOSFET (with fast diode) in TO-247 package
설명
유통업체에서 제공한 Infineon IPW60R190C6FKSA1에 대한 설명입니다.
151W 20V 3.5V 63nC@ 10V 1N 600V 190m¦¸@ 10V 20.2A 1.4nF@ 100V 15.9mm*5.03mm*20.9mm
Power Field-Effect Transistor, 20.2A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
CoolMOS™ C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO247-3, RoHS
Infineon SCT
MOSFET,N CH,600V,20.2A,TO247; Transistor Polarity:N Channel; Continuous Drain Current Id:20.2A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.17ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:151W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:20.2A; Power Dissipation Pd:151W; Voltage Vgs Max:30V
CoolMOS™ C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching superjunction MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler.600V CoolMOS™ C6 is replacement for 600V CoolMOS™ C3650V CoolMOS™ C6 is replacement for 650V CoolMOS™ C3
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-247-3
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)20.2 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance190 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time9 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.4 nF
Max Operating Temperature150 °C
Max Power Dissipation151 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Nominal Vgs3 V
Number of Elements1
On-State Resistance190 mΩ
Package Quantity240
Power Dissipation151 W
Rds On Max190 mΩ
Rise Time11 ns
Schedule B8541290080
Threshold Voltage3 V
Turn-Off Delay Time110 ns
Turn-On Delay Time15 ns
Dimensions
Height21.1 mm
Length16.13 mm
Width5.21 mm