대체 부품
Price @ 1000
$ 0.497
$ 1.061
$ 1.061
Stock
3,525,714
566,077
566,077
Authorized Distributors
6
3
3
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
SOIC
SOIC
SOIC
Drain to Source Voltage (Vdss)
55 V
55 V
55 V
Continuous Drain Current (ID)
4.7 A
4.7 A
4.7 A
Threshold Voltage
1 V
1 V
1 V
Rds On Max
50 mΩ
50 mΩ
50 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
2 W
2 W
2 W
Input Capacitance
740 pF
740 pF
740 pF
공급망
Country of OriginMainland China, Philippines, Thailand, Usa
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1997-10-29
Lifecycle StatusProduction (Last Updated: 4 months ago)
관련 부품
InfineonIRF7342TRPBF
MOSFET, Power;Dual P-Ch;VDSS -55V;RDS(ON) 0.105Ohm;ID -3.4A;SO-8;PD 2W;VGS +/-20
Diodes Inc.ZXMN6A11DN8TA
ZXMN6A11DN8 Series Dual N-Channel 60 V 0.12 Ohm Power MOSFET SMT - SOIC-8
설명
유통업체에서 제공한 Infineon IRF7343TRPBF에 대한 설명입니다.
Dual N/P-Channel 55 V 0.05/0.105 Ohm 24/26 nC HEXFET® Power Mosfet - SOIC-8
Trans MOSFET N/P-CH 55V 4.7A/3.4A 8-Pin SOIC N T/R
Dual MOSFET, Complementary N and P Channel, 55 V, 55 V, 4.7 A, 4.7 A, 0.043 ohm
Transistor MOSFET N+P-Ch.4,7+3,4A/55V SO8 IRF 7343 TRPBF
55V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
Infineon SCT
HEXFET POWER MOSFET Power Field-Effect Transistor, 4.7A I(D), 55V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
MOSFET, NP CH, 55V, 3.4A, 8SOIC; Transistor Polarity:N and P Channel; Continuous Drain Current Id:4.7A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.043ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageSOIC
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)4.7 A
Current Rating4.7 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance50 mΩ
Drain to Source Voltage (Vdss)55 V
Gate to Source Voltage (Vgs)20 V
Input Capacitance740 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Nominal Vgs1 V
Number of Channels2
Number of Elements2
On-State Resistance50 mΩ
Package Quantity4000
PackagingTape & Reel
Power Dissipation2 W
Rds On Max50 mΩ
Resistance105 mΩ
Schedule B8541290080
Threshold Voltage1 V
Dimensions
Height1.75 mm
Length5 mm
Width4 mm