MOSFET, N & P-CH, 40V, 6.2A, SOIC-8; Transistor Polarity:N and P Channel; Continuous Drain Current Id:6.2A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.021ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vg
These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.