onsemi FDD3510H
$ 0.666
Obsolete
Prezzo e stock
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Cronologia dell'inventario
Tendenza a 3 mesi: -0.69%
Modelli CAD
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-05-07
Lifecycle StatusObsolete (Last Updated: 5 days ago)
LTB Date2021-12-24
LTD Date2021-12-24
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 5 days ago)
Parti correlate
STMicroelectronicsSTD15NF10T4
N-Channel 100V - 0.06Ohm - 23A - DPAK LOOhm GATE CHARGE StripFET(TM) II POWER MOSFET
InfineonIPD350N06LGBTMA1
Trans MOSFET N-CH 60V 29A 3-Pin(2+Tab) DPAK T/R / OptiMOS® Power-Transistor
STMicroelectronicsSTD12NF06T4
N-Channel 60V - 0.08Ohm - 12A - DPAK StripFET(TM) II POWER MOSFET
Descrizioni
Descrizioni di onsemi FDD3510H fornite dai suoi distributori.
Trans MOSFET N/P-CH 80V 4.3A/2.8A 5-Pin(4+Tab) DPAK T/R / MOSFET N/P-CH 80V 4.3A/2.8A DPAK
Transistor MOSFET Array N/P-CH 80V 13.9A 5-Pin DPAK T/R
Dual N/P-Channel 80 V 80 mOhm Surface Mount PowerTrench Mosfet TO-252-5
Power Field-Effect Transistor, 4.3A I(D), 80V, 0.08ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
MOSFET, N/P-CH, 80V, 13.9A, TO-252 -5; Transistor Polarity: N and P Channel; Continuous Drain Current Id: 13.9A; Drain Source Voltage Vds: 80V; On Resistance Rds(on): 0.08ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage
These dual N and P-Channel enhancement mode Power MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -0.69%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
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Specifiche tecniche
Physical
Case/PackageTO-252
MountSurface Mount
Number of Terminals4
Weight260.37 mg
Technical
Continuous Drain Current (ID)4.3 A
Drain to Source Breakdown Voltage80 V
Drain to Source Resistance80 mΩ
Drain to Source Voltage (Vdss)80 V
Fall Time5 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance800 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation35 W
Min Breakdown Voltage80 V
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements2
Power Dissipation1.3 W
Rds On Max80 mΩ
Resistance80 MΩ
Rise Time3 ns
Schedule B8541290080
Turn-Off Delay Time25 ns
Dimensions
Height2.517 mm
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità