onsemi FDD5614P
$ 0.272
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Cronologia dell'inventario
Tendenza a 3 mesi: -5.00%
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2000-10-13
Lifecycle StatusEOL (Last Updated: 1 week ago)
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 1 week ago)
Parti correlate
STMicroelectronicsSTD12NF06T4
N-Channel 60V - 0.08Ohm - 12A - DPAK StripFET(TM) II POWER MOSFET
InfineonIPD350N06LGBTMA1
Trans MOSFET N-CH 60V 29A 3-Pin(2+Tab) DPAK T/R / OptiMOS® Power-Transistor
STMicroelectronicsSTD12NF06L
N-channel 60 V, 0.08 Ohm typ., 12 A STripFET(TM) II Power MOSFET in a DPAK package
Descrizioni
Descrizioni di onsemi FDD5614P fornite dai suoi distributori.
P-Channel PowerTrench® MOSFET, 60V, -15A, 100mΩ
P-Channel 60 V 100 mOhm Surface Mount PowerTrench Mosfet TO-252-3
Power Field-Effect Transistor, 15A I(D), 60V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
This 60V P-Channel MOSFET uses Fairchild's high voltage PowerTrench process. It has been optimized for power management applications.
MOSFET Transistor; Transistor Polarity:P Channel; Continuous Drain Current Id:-15A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.1ohm; Rds(on) Test Voltage, Vgs:-10V; Threshold Voltage, Vgs Typ:-1.6V ;RoHS Compliant: Yes
Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = -15 / Drain-Source Voltage (Vds) V = -60 / ON Resistance (Rds(on)) mOhm = 130 / Gate-Source Voltage V = 20 / Fall Time ns = 22 / Rise Time ns = 20 / Turn-OFF Delay Time ns = 34 / Turn-ON Delay Time ns = 14 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 4 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 1.6
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -5.00%
Modelli CAD
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Specifiche tecniche
Physical
Case/PackageTO-252
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight4.535924 g
Technical
Continuous Drain Current (ID)15 A
Current15 A
Current Rating-15 A
Drain to Source Breakdown Voltage-60 V
Drain to Source Resistance100 mΩ
Drain to Source Voltage (Vdss)-60 V
Dual Supply Voltage-60 V
Element ConfigurationSingle
Fall Time12 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance759 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation42 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Nominal Vgs-1.6 V
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation42 W
Rds On Max100 mΩ
Resistance100 MΩ
Rise Time10 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage-1.6 V
Turn-Off Delay Time19 ns
Turn-On Delay Time7 ns
Voltage60 V
Voltage Rating (DC)-60 V
Dimensions
Height2.39 mm
Length6.73 mm
Width6.6 mm
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità