12 AMPS, 60 VOLTS N-CHANNEL DPAK-3 POWER MOSFET Power Field-Effect Transistor, 12A I(D), 60V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

ComSIT Distribution GmbH

MOSFET, N, SMD, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:60V; On Resistance Rds(on):180mohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs Typ:1.5V; Power Dissipation Pd:48W; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:12A; Package / Case:DPAK; Power Dissipation Pd:48W; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Max:1.5V; Voltage Vgs Rds on Measurement:5V

element14 APAC

This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.

Fairchild Semiconductor

Immagini

Rochester Electronics

Alias del produttore

onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:

ON Semiconductor
ONS
ONSEMICON
ON SEM
ON SEMICONDUCTO
ON SEMICONDUCTORS
ONSEMIC
ON Semicondu
OSC
ONSE
ON SEMICOND
ON Semiconductor / Fairchild
SCG
ON Semiconductor Cor
ON SEMICO
ONSM
ON SEMICONDUCTOR CORP
onsemi / Fairchild
MOT/ON SEMI
Fairchild/ONSemiconductor
ON Semiconductor Corporation
ON4
ON Semi - ON Semiconductor
ON SEMICONDUCT
ON-SEMI SCG
ON Semiconductor Inc.
onsemiconductor
On Semiconductor Ltd

Alias del numero di parte

Questa parte può essere conosciuta con i seguenti numeri di parte alternativi:

MTD3055VL.
MTD3055VL..

Cronologia dell'inventario

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Modelli CAD

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Parti alternative

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Specifiche tecniche

Physical

Case/PackageTO-252

Contact PlatingTin

MountSurface Mount

Number of Pins3

Number of Terminals2

Weight260.37 mg

Technical

Continuous Drain Current (ID)12 A

Current Rating12 A

Drain to Source Breakdown Voltage60 V

Drain to Source Resistance180 mΩ

Drain to Source Voltage (Vdss)60 V

Dual Supply Voltage60 V

Element ConfigurationSingle

Fall Time90 ns

Gate to Source Voltage (Vgs)15 V

Input Capacitance570 pF

Max Junction Temperature (Tj)175 °C

Max Operating Temperature175 °C

Max Power Dissipation48 W

Min Breakdown Voltage60 V

Min Operating Temperature-55 °C

Nominal Vgs1.5 V

Number of Channels1

Number of Elements1

Power Dissipation48 W

Rds On Max180 mΩ

Resistance107 mΩ

Rise Time190 ns

Schedule B8541290080

TerminationSMD/SMT

Threshold Voltage1.5 V

Turn-Off Delay Time14 ns

Turn-On Delay Time9 ns

Voltage Rating (DC)60 V

Dimensions

Height2.517 mm

Length6.73 mm

Width6.22 mm

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per onsemi MTD3055VL.

Upverter

Technical Drawing1 pagina3 anni fa

Datasheet8 pagine19 anni fa

TME

IHS

Farnell

Fairchild Semiconductor

Conformità

Classificazione ambientale

China RoHSNon-Compliant

Lead FreeLead Free

Radiation HardeningNo

REACH SVHCNo

RoHSCompliant

Dichiarazioni di conformità

Rohs Statement3 pagine5 anni fa

Reach Statement3 pagine12 anni fa

Materials Sheet3 pagine12 anni fa

Reach Statement3 pagine11 anni fa

Materials Sheet3 pagine11 anni fa

Reach Statement8 pagine11 anni fa

Rohs Statement1 pagina13 anni fa

Rohs Statement1 pagina14 anni fa

Reach Statement2 pagine13 anni fa

Rohs StatementN/AN/A