Infineon IPA65R400CEXKSA1

MOSFET N-CH 650V TO220 / N-Channel 650 V 15.1A (Tc) 31W (Tc) Through Hole PG-TO220-FP
$ 0.534
Production
Pagina del produttoreScheda dati

Prezzo e stock

Vedi tutte le interruzioni di prezzo
DistributorSKUMinPkg
AvnetIPA65R400CEXKSA160050
5h
NewarkIPA65R400CEXKSA11861
Rochester ElectronicsIPA65R400CEXKSA11753
2h
DigiKey448-IPA65R400CEXKSA1-ND361Tube
Future Electronics
2
IPA65R400CEXKSA103KTube

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per Infineon IPA65R400CEXKSA1.

IHS

Datasheet14 pagine0 anni fa
Datasheet14 pagine0 anni fa

Cronologia dell'inventario

Trend di 3 mesi:
-30.26%
Powered bySpectra logo

Supply Chain

Country of OriginMainland China, Malaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2016-02-24
Lifecycle StatusProduction (Last Updated: 1 week ago)

Parti correlate

STMicroelectronicsSTF18N65M2
N-channel 650 V, 0.275 Ohm typ., 12 A MDmesh M2 Power MOSFET in a TO-220FP package
Dettagli
InfineonIPA60R400CEXKSA1
Single N-Channel 600 V 400 mOhm 32 nC CoolMOS Power Mosfet - TO-220-3FP, PG-TO220-3, RoHS
Dettagli
InfineonIPA50R280CEXKSA2
500V CoolMOS™ CE Power MOSFET | MOSFET N-CH 500V 13A PG-TO220FP
Dettagli
InfineonIPAW60R380CEXKSA1
Improved creepage distance for open frame power supplies, PG-TO220-3, RoHS
Dettagli
STMicroelectronicsSTF12N65M2
N-channel 650 V, 0.42 Ohm typ., 8 A MDmesh M2 Power MOSFET in a TO-220FP package
Dettagli
STMicroelectronicsSTF13N65M2
N-channel 650 V, 0.37 Ohm typ., 10 A MDmesh M2 Power MOSFET in TO-220FP package
Dettagli

Descrizioni

Descrizioni di Infineon IPA65R400CEXKSA1 fornite dai suoi distributori.

MOSFET N-CH 650V TO220 / N-Channel 650 V 15.1A (Tc) 31W (Tc) Through Hole PG-TO220-FP
Win Source
Trans MOSFET N-CH 650V 15.1A 3-Pin(3+Tab) TO-220FP Tube, PG-TO220-3, RoHS
Infineon SCT
Power MOSFET, N Channel, 650 V, 15.1 A, 0.36 ohm, TO-220FP, Through Hole
Avnet
Power Field-Effect Transistor, 15.1A I(D), 650V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
IHS
Mosfet, N-Ch, 650V, 15.1A, To-220Fp; Transistor Polarity:N Channel; Continuous Drain Current Id:15.1A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.36Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes |Infineon Technologies IPA65R400CEXKSA1
Newark
Summary of Features: Narrow margins between typical and max R DS(on); Reduced energy stored in output capacitance (E oss); Good body diode ruggedness and reduced reverse recovery charge (Q rr); Optimized integrated R g | Benefits: Low conduction losses; Low switching losses; Suitable for hard and soft switching; Easy controllable switching behavior; Improved efficiencyand consequent reduction of power consumption; Less design in effort; Easy to use | Target Applications: Laptop and notebook adapter; Low power charger; Lighting; LCD and LED TV
Infineon

Immagini

Augswan
Newark
RS
LKR

Alias del produttore

Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Alias del numero di parte

Questa parte può essere conosciuta con i seguenti numeri di parte alternativi:

  • IPA65R400CE
  • SP001429766