Infineon IPA60R400CEXKSA1

Single N-Channel 600 V 400 mOhm 32 nC CoolMOS Power Mosfet - TO-220-3FP, PG-TO220-3, RoHS

31W 20V 3.5V 32nC@ 10V 1N 600V 400m¦¸@ 10V 14.7A 700pF@ 100V TO-220 10.5mm*4.7mm*15.99mm

Trans MOSFET N-CH 600V 14.7A 3-Pin(3+Tab) TO-220FP Tube

Power Field-Effect Transistor, 14.7A I(D), 600V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Mosfet, N-Ch, 600V, 14.7A, To-220Fp; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:14.7A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; Msl:- Rohs Compliant: Yes |Infineon Technologies IPA60R400CEXKSA1

CoolMOS CE is suitable for hard and soft switching applications and as modern superjunction, it delivers low conduction and switching losses improving efficiency and ultimately reduces power consumption. 600V, 650V and 700V CoolMOS CE combine the optimal R DS(on) and package offering suitable in low power chargers for mobile phones and tablets. | Summary of Features: Narrow margins between typical and max R DS(on); Reduced energy stored in output capacitance (E oss); Good body diode ruggedness and reduced reverse recovery charge (Q rr); Optimized integrated R g | Benefits: Low conduction losses; Low switching losses; Suitable for hard and soft switching; Easy controllable switching behavior; Improved efficiencyand consequent reduction of power consumption; Less design in effort; Easy to use | Target Applications: Laptop and notebook adapter; Low power charger; Lighting; LCD and LED TV