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CoolMOS CE Series N-Channel 500 V 18.1 A (Tc) 30.4 W (Tc) MOSFET - PG-TO220-FP
500V CoolMOS™ CE Power MOSFET | MOSFET N-CH 500V 13A PG-TO220FP
Mosfet, N-Ch, 500V, 18.1A, To-220Fp; |Infineon Technologies IPA50R280CEXKSA2
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 7.0pF 50volts C0G +/-0.5pF
Trans MOSFET N-CH 500V 13A 3-Pin(3+Tab) TO-220FP
500V 7.5A 30.4W 280m´Î@13V4.2A 3.5V@350Ã×A N Channel TO-220FP MOSFETs ROHS
Power Field-Effect Transistor, 18.1A I(D), 500V, 0.28ohm, 1-Element, N-Channel, Silicon, Superjunction Mosfet FET, TO-220AB
30.4W(Tc) 20V 3.5V@ 350µA 32.6nC@ 10 V 1individualNChannel 500V 280mΩ@ 4.2A,13V 18.1A 773pF@100V TO-220,TO-220F Through hole mounting 10.5mm*4.7mm*15.99mm
MOSFET, N-CH, 500V, 18.1A, TO-220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 18.1A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.25ohm; Rds(on) Test Voltage Vgs: 13V; Threshold Voltage Vgs: 3V;
500V CoolMOS™ CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching superjunction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market.
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 18 / Drain-Source Voltage (Vds) V = 550 / ON Resistance (Rds(on)) mOhm = 280 / Gate-Source Voltage V = 20 / Fall Time ns = 7.6 / Rise Time ns = 6.4 / Turn-OFF Delay Time ns = 40 / Turn-ON Delay Time ns = 8 / Operating Temperature Min. °C = -40 / Operating Temperature Max. °C = 150 / Package Type = TO-220 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 30.4