Vishay SIHG33N60E-GE3
$ 3.308
Production
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Arrow Electronics | SIHG33N60E-GE3 | 900 | 1 | |||||||||
| Verical | SIHG33N60E-GE3 | 900 | 2 | |||||||||
| TTI | SIHG33N60E-GE3 | 2.500 | 500 | Tube | 14h | |||||||
| TME | SIHG33N60E-GE3 | 0 | 1 | 1h | ||||||||
| Newark | SIHG33N60E-GE3 | 0 | 500 | Cut Tape |
Bestandsverlauf
3-Monats-Trend: +0.00%
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Price @ 1000
$ 3.308
$ 3.18
Stock
67,708
4,750
Authorized Distributors
6
4
Mount
Through Hole
-
Case/Package
TO-247-3
TO-247-3
Drain to Source Voltage (Vdss)
600 V
600 V
Continuous Drain Current (ID)
33 A
33 A
Threshold Voltage
2 V
-
Rds On Max
99 mΩ
-
Gate to Source Voltage (Vgs)
20 V
-
Power Dissipation
278 W
-
Input Capacitance
3.508 nF
-
Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-09-19
Lifecycle StatusProduction (Last Updated: 4 months ago)
Verwandte Teile
VishaySIHG30N60E-GE3
MOSFET, N CH, 600V, 29A, TO-247AC-3; Transistor Polarity:N Channel; Continuous D
VishaySIHG30N60E-E3
MOSFET, N CH, 600V, 29A, TO-247AC; Transistor Polarity:N Channel; Continuous Dra
VishaySIHW33N60E-GE3
MOSFET, N CH, 600V, 33A, TO-247AD-3; Transistor Polarity:N Channel; Continuous D
STMicroelectronicsSTWA45N65M5
N-channel 650 V, 0.067 Ohm typ., 35 A MDmesh M5 Power MOSFET in TO-247 long leads package
STMicroelectronicsSTW45N60DM2AG
MOSFET N-CH 600V 34A TO247 / N-Channel 600 V 34A (Tc) 250W (Tc) Through Hole TO-247-3
Beschreibungen
Beschreibungen von Vishay SIHG33N60E-GE3, die von den Distributoren bereitgestellt werden.
SiHG33N60E Series ±30 V 33 A 278 W Through Hole Power Mosfet - TO-247AC
Trans MOSFET N-CH 600V 33A 3-Pin(3+Tab) TO-247AC
MOSFET, N CH, 600V, 33A, TO-247AC-3
MOSFET 600V 99mOhm@10V 33A N-Ch E-SRS
Power Field-Effect Transistor, 33A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
278W(Tc) 30V 4V@ 250¦ÌA 150nC@ 10 V 1N 600V 99m¦¸@ 16.5A,10V 33A 3.508nF@100V TO-247AC 15.87mm*5.31mm*20.82mm
MOSFET, N CH, 600V, 33A, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:33A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.083ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:278W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-247AC; No. of Pins:3; MSL:-; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:30V
Aliasnamen des Herstellers
Vishay verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Vishay ist möglicherweise auch unter den folgenden Namen bekannt:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- Vishay Polytech
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
Bestandsverlauf
3-Monats-Trend: +0.00%
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Symbol, Footprint und 3D STEP herunterladen
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Technische Spezifikationen
Physical
Case/PackageTO-247-3
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight38.000013 g
Technical
Continuous Drain Current (ID)33 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance99 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time80 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.508 nF
Max Operating Temperature150 °C
Max Power Dissipation278 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation278 W
Rds On Max99 mΩ
Rise Time90 ns
Schedule B8541290080
Threshold Voltage2 V
Turn-Off Delay Time150 ns
Turn-On Delay Time56 ns
Compliance
Umweltklassifizierung
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance-Erklärungen