onsemi HGTG30N60B3

Trans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-247 Rail
Obsolete
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DistributorSKUMinPkg
Win SourceWS-HGTG30N60B334.00014
11h
Fmall Co., LimitedHGTG30N60B338.760
>1wk
AnlinkdaHGTG30N60B319.825
18h
LixincHGTG30N60B319.383
1d
SHENGYU ELECTRONICSHGTG30N60B315.0331
3d

Datenblätter und Dokumente

Laden Sie Datenblätter und Herstellerdokumentation für onsemi HGTG30N60B3 herunter.

Future Electronics

Datasheet10 SeitenVor 6 Jahren

IHS

onsemi

element14

Farnell

Alternative Teile

Dieser Teil
Alternative Teile
onsemiHGTG30N60B3
onsemiHGTG30N60B3_NL
Price @ 1000
$ 4.67
Stock
216,780
102
Authorized Distributors
0
1
Mount
Through Hole
-
Case/Package
TO-247
TO-247
Collector Emitter Breakdown Voltage
600 V
-
Max Collector Current
60 A
60 A
Power Dissipation
208 W
-
Collector Emitter Saturation Voltage
1.45 V
-
Reverse Recovery Time
-
-

Lieferkette

Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1995-07-01
Lifecycle StatusObsolete (Last Updated: 3 days ago)
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)

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Beschreibungen

Beschreibungen von onsemi HGTG30N60B3, die von den Distributoren bereitgestellt werden.

Trans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-247 Rail
Avnet
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247
IHS
IGBT Transistors 600V N-Channel IGBT UFS Series
Future Electronics
IGBT UFS N-CHAN 600V 60A TO-247
DigiKey
TO-247-3 Through Hole N-CHANNEL SINGLE WITH BUILT-IN DIODE IGBT Transistor 1.9V @ 15V 30A 60A 208W 36ns/137ns
Fly-Wing Technology
Ptpigbt To247 30A 600V Rohs Compliant: Yes
Newark
60 A 600 V N-CHANNEL IGBT TO-247
Component Stockers USA
IC REG LINEAR POS ADJ 1.2A 6DFN
Utmel Electronic
TRANSISTOR, IGBT; Transistor Type:IGBT; DC Collector Current:60A; Collector Emitter Voltage Vces:1.45V; Power Dissipation Pd:208W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:60A; Package / Case:TO-247; Power Dissipation Max:208W; Power Dissipation Pd:208W; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.45V
element14 APAC
The HGTG30N60B3 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as UPS, solar inverter and power supplies.
Fairchild Semiconductor

Bilder

Newark
Newark
Rochester Electronics
iiiC
UTSource
Farnell
RS

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Aliasnamen für Teilnummern

Dieses Teil ist möglicherweise auch unter diesen alternativen Teilenummern bekannt:

  • HGTG30N60B3.