onsemi HGTG20N60A4D

HGTG20N60A4 Series 600 V 70 A Flange Mount SMPS N-Channel IGBT-TO-247
EOL
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element14 APACHGTG20N60A4D01
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FarnellHGTG20N60A4D01
9h
Microchip USAHGTG20N60A4D34350Tray
4h
Component Stockers USAHGTG20N60A4D246
2d
Win SourceWS-HGTG20N60A4D1.84713
11h

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Datasheet0 SeitenVor 0 Jahren
Datasheet10 SeitenVor 6 Jahren

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Lieferkette

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1999-10-22
Lifecycle StatusEOL (Last Updated: 4 days ago)
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 4 days ago)

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Beschreibungen

Beschreibungen von onsemi HGTG20N60A4D, die von den Distributoren bereitgestellt werden.

HGTG20N60A4 Series 600 V 70 A Flange Mount SMPS N-Channel IGBT-TO-247
Future Electronics
600 V, N-CHANNEL IGBT WITH ANTI-PARALLEL HYPERFAST DIODE Insulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel, TO-247
ComSIT Distribution GmbH
IGBT, TO-247; Transistor Type:IGBT; DC Collector Current:70A; Collector Emitter Voltage Vces:2.7V; Power Dissipation Pd:290W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:70A; Current Temperature:25°C; Device Marking:HGTG20N60A4D; Fall Time Typ:32ns; Fall Time tf:32ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247; Power Dissipation Max:290W; Power Dissipation Pd:290W; Power Dissipation Pd:290W; Pulsed Current Icm:280A; Rise Time:12ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
element14 APAC
The HGTG20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49339. The diode used in anti-parallel is the development type TA49372.This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies.
Fairchild Semiconductor

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element14 APAC
TME
iiiC
UTSource
UTSource
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Future Electronics

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