Infineon IRLML2402TRPBF

Mosfet, Power; N-ch; Vdss 20V; Rds(on) 0.25 Ohm; Id 1.2A; MICRO3; Pd 540MW; Vgs +/-12V
$ 0.335
Obsolete
HerstellerseiteDatenblatt

Preis und Lagerbestand

Alle Preisnachlässe anzeigen
DistributorSKUMinPkg
Future ElectronicsIRLML2402TRPBF600.0003KTape & Reel
Arrow ElectronicsIRLML2402TRPBF31
RS (Formerly Allied Electronics)IRLML2402TRPBF01Bulk
3h
Farnell
4
IRLML2402TRPBF01Custom Reel
2h
Sensible MicroIRLML2402TRPBF6.609
2d

Datenblätter und Dokumente

Laden Sie Datenblätter und Herstellerdokumentation für Infineon IRLML2402TRPBF herunter.

Farnell

Datasheet10 SeitenVor 12 Jahren
Datasheet9 SeitenVor 19 Jahren
Datasheet9 SeitenVor 23 Jahren

IHS

Upverter

Newark

iiiC

Bestandsverlauf

3-Monats-Trend:
-15.90%
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CAD-Modelle

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Alternative Teile

Dieser Teil
Alternative Teile
InfineonIRLML2402TRPBF
Diodes Inc.DMN2112SN-7
Diodes Inc.DMN2112SN-7
Price @ 1000
$ 0.335
$ 0.52
$ 0.52
Stock
8,116,059
194,114
194,114
Authorized Distributors
4
2
2
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
SOT-23
SC
SC
Drain to Source Voltage (Vdss)
20 V
20 V
20 V
Continuous Drain Current (ID)
760 mA
1.2 A
1.2 A
Threshold Voltage
700 mV
1.2 V
1.2 V
Rds On Max
250 mΩ
100 mΩ
100 mΩ
Gate to Source Voltage (Vgs)
12 V
8 V
8 V
Power Dissipation
340 mW
500 mW
500 mW
Input Capacitance
110 pF
220 pF
220 pF

Lieferkette

Country of OriginMainland China, Philippines
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date1995-07-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2024-07-31
LTD Date2025-01-31

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Beschreibungen

Beschreibungen von Infineon IRLML2402TRPBF, die von den Distributoren bereitgestellt werden.

MOSFET, Power;N-Ch;VDSS 20V;RDS(ON) 0.25Ohm;ID 1.2A;Micro3;PD 540mW;VGS +/-12V
RS (Formerly Allied Electronics)
20V Single N-Channel HEXFET Power MOSFET in a Micro 3 package, SOT23-3, RoHS
Infineon SCT
Single N-Channel 20 V 0.25 Ohm 2.6 nC HEXFET® Power Mosfet - MICRO-3
Future Electronics
Transistor, MOSFETS, HEX/MOS N-Channel, 20V, 1.2A, SOT-23
Sensible Micro
HEXFET POWER MOSFET Small Signal Field-Effect Transistor, 1.2A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
ComSIT Distribution GmbH
MOSFET, N, MICRO3; Transistor Polarity:N Channel; Continuous Drain Current Id:930mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):250mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:700mV; Power Dissipation Pd:540mW; Transistor Case Style:µSOIC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:1.2A; Package / Case:Micro3; Power Dissipation Pd:540mW; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:700mV; Voltage Vgs Rds on Measurement:4.5V
element14 APAC
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Infineon
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 1.2 / Drain-Source Voltage (Vds) V = 20 / ON Resistance (Rds(on)) mOhm = 250 / Gate-Source Voltage V = 12 / Fall Time ns = 4.8 / Rise Time ns = 9.5 / Turn-OFF Delay Time ns = 9.7 / Turn-ON Delay Time ns = 2.5 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) mW = 540
Distrelec
MOSFET, N REEL 3K; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:20V; Current, Id Cont:1.2A; Resistance, Rds On:0.25ohm; Voltage, Vgs Rds on Measurement:4.5V; Voltage, Vgs th Typ:0.7V; Case Style:SOT-23; Termination Type:SMD; Current, Idm Pulse:7.4A; External Depth:2.5mm; External Length / Height:1.12mm; No. of Pins:3; Power Dissipation:0.54W; Power, Pd:0.54W; Quantity, Reel:3000; SMD Marking:1A; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Temperature, Tj Min:-55°C; Transistors, No. of:1; Voltage, Vds Max:20V; Voltage, Vgs th Min:0.7V; Width, External:3.05mm; Width, Tape:8mm
Farnell

Bilder

element14 APAC
Augswan
RS (Formerly Allied Electronics)
TME
Newark
Distrelec
element14
Component Sense
South Microelectronics
DKO Electronshik
Jameco
LCSC
Component Sense
LZChips
Conrad

Aliasnamen des Herstellers

Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Aliasnamen für Teilnummern

Dieses Teil ist möglicherweise auch unter diesen alternativen Teilenummern bekannt:

  • IRFIRLML2402TRPBF
  • IRLML2402
  • IRLML2402*
  • IRLML2402-TRPBF
  • IRLML2402TRPBF.
  • SP001552710