Beschreibungen von Infineon IRFS4020TRLPBF, die von den Distributoren bereitgestellt werden.
Single N-Channel 200 V 105 mOhm 29 nC HEXFET® Power Mosfet - D2PAK
MOSFET N-CH 200V 18A D2PAK N-Channel 200 V 18A (Tc) 100W (Tc) Surface Mount D2PAK
Trans MOSFET N-CH 200V 18A 3-Pin(2+Tab) D2PAK T/R
AUDIO MOSFET, 200V, 18A, 105 MOHM, 18 NC QG, D2-PAK | Infineon IRFS4020TRLPBF
200V Single N-Channel Digital Audio HEXFET Power MOSFET Switch in a D2Pak package, D2PAK-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 18A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Mosfet, N-Ch, 200V, 18A, To-263; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:200V; On Resistance Rds(On):0.085Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.9V; Power Rohs Compliant: Yes |Infineon Technologies IRFS4020TRLPBF
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 18 / Drain-Source Voltage (Vds) V = 200 / ON Resistance (Rds(on)) mOhm = 105 / Gate-Source Voltage V = 20 / Fall Time ns = 6.3 / Rise Time ns = 12 / Turn-OFF Delay Time ns = 16 / Turn-ON Delay Time ns = 7.8 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-263 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 100