Vishay IRF640STRRPBF
$ 0.823
Production
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Verical | IRF640STRRPBF | 207 | 7 | |||||||||
| Arrow Electronics | IRF640STRRPBF | 207 | 1 | |||||||||
| TME | IRF640STRRPBF | 0 | 800 | 15h | ||||||||
| TTI | IRF640STRRPBF | 0 | 800 | Tape & Reel | 4h | |||||||
| Newark | IRF640STRRPBF | 0 | 800 | Tape & Reel |
Bestandsverlauf
3-Monats-Trend: -47.56%
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Price @ 1000
$ 0.823
$ 1.06
$ 1.06
Stock
130,427
101,429
101,429
Authorized Distributors
6
6
6
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
DPAK
DPAK
Drain to Source Voltage (Vdss)
200 V
200 V
200 V
Continuous Drain Current (ID)
18 A
18 A
18 A
Threshold Voltage
-
4 V
4 V
Rds On Max
180 mΩ
180 mΩ
180 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
130 W
3.1 W
3.1 W
Input Capacitance
1.3 nF
1.3 nF
1.3 nF
Lieferkette
Country of OriginIsrael
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1993-09-01
Lifecycle StatusProduction (Last Updated: 4 months ago)
LTB Date2008-06-30
LTD Date2008-09-30
Verwandte Teile
InfineonIRF640NSTRLPBF
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.15Ohm;ID 18A;D2Pak;PD 150W;VGS +/-20V;-55
InfineonIRF640NSPBF
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.15Ohm;ID 18A;D2Pak;PD 150W;VGS +/-20V;-55
InfineonIRF640NSTRRPBF
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.15Ohm;ID 18A;D2Pak;PD 150W;VGS +/-20V;-55
Beschreibungen
Beschreibungen von Vishay IRF640STRRPBF, die von den Distributoren bereitgestellt werden.
Single N-Channel 200 V 0.18 Ohms Surface Mount Power Mosfet - D2PAK-3
Tape & Reel (TR) Surface Mount N-Channel Single Mosfet Transistor 18A Tc 18A 130W 36ns
3.1W(Ta),130W(Tc) 20V 4V@ 250¦ÌA 70nC@ 10 V 1N 200V 180m¦¸@ 11A,10V 18A 1.3nF@25V D2PAK,TO-263
Trans MOSFET N-CH 200V 18A 3-Pin(2+Tab) D2PAK T/R
Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Aliasnamen des Herstellers
Vishay verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Vishay ist möglicherweise auch unter den folgenden Namen bekannt:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- Vishay Polytech
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
Bestandsverlauf
3-Monats-Trend: -47.56%
CAD-Modelle
Symbol, Footprint und 3D STEP herunterladen
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Technische Spezifikationen
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight1.437803 g
Technical
Continuous Drain Current (ID)18 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance180 mΩ
Drain to Source Voltage (Vdss)200 V
Element ConfigurationSingle
Fall Time36 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.3 nF
Max Operating Temperature150 °C
Max Power Dissipation130 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation130 W
Rds On Max180 mΩ
Resistance180 mΩ
Rise Time51 ns
Schedule B8541290080
Turn-Off Delay Time45 ns
Turn-On Delay Time14 ns
Dimensions
Height4.83 mm
Length10.67 mm
Width9.65 mm
Compliance
Umweltklassifizierung
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance-Erklärungen