Infineon IRFR4510TRPBF
$ 0.89
Obsolete
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Arrow Electronics | IRFR4510TRPBF | 5.295 | 1 | |||||||||
| Rochester Electronics | IRFR4510TRPBF | 11.500 | 13h | |||||||||
| Future Electronics | IRFR4510TRPBF | 0 | 2K | Tape & Reel | ||||||||
| RS (Formerly Allied Electronics) | IRFR4510TRPBF | 0 | 2K | Bulk | 6h | |||||||
| Avnet | IRFR4510TRPBF | 0 | 2K | 1d |
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Price @ 1000
$ 0.89
$ 0.8
Stock
535,103
127,005
Authorized Distributors
6
2
Mount
Surface Mount
Surface Mount
Case/Package
DPAK
DPAK
Drain to Source Voltage (Vdss)
100 V
100 V
Continuous Drain Current (ID)
56 A
56 A
Threshold Voltage
3 V
3 V
Rds On Max
13.9 mΩ
13.9 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
143 W
143 W
Input Capacitance
3.031 nF
3.031 nF
Lieferkette
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2012-05-02
Lifecycle StatusObsolete (Last Updated: 4 months ago)
Verwandte Teile
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Mosfet, N-Ch, 100V, 60A, To-252 Rohs Compliant: Yes |Infineon Technologies IPD60N10S412ATMA1
STMicroelectronicsSTD80N10F7
N-channel 100 V, 0.0085 Ohm typ., 70 A STripFET F7 Power MOSFET in DPAK package
InfineonIPD60N10S4L12ATMA1
IPD60N10S4L Series 100 V 60 A OptiMOSTM-T2 Power-Transistor - PG-TO-252-3-313
InfineonIRFR7746TRPBF
75V Single N-Channel HEXFET Power MOSFET in a D-PAK package, DPAK-3, RoHS
Beschreibungen
Beschreibungen von Infineon IRFR4510TRPBF, die von den Distributoren bereitgestellt werden.
TRANSISTOR, HEXFET POWER MOSFET, N-CHANNEL, 100V , 63A, 13.9MOHM MAX, D-PAK
Single N-Channel 100 V 13.9 mOhm 54 nC HEXFET® Power Mosfet - TO-252-3
Trans MOSFET N-CH Si 100V 63A 3-Pin(2+Tab) DPAK T/R / MOSFET N CH 100V 56A DPAK
100V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 56A I(D), 100V, 0.0139ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET, N-CH, 100V, 63A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:56A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0111ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:143W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-252AA; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +175°C
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 63 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 13.9 / Gate-Source Voltage V = 20 / Fall Time ns = 34 / Rise Time ns = 42 / Turn-OFF Delay Time ns = 42 / Turn-ON Delay Time ns = 18 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 143
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
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Technische Spezifikationen
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)56 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance13.9 mΩ
Drain to Source Voltage (Vdss)100 V
Fall Time34 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.031 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation143 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs3 V
Number of Channels1
Number of Elements1
On-State Resistance13.9 mΩ
Package Quantity2000
PackagingTape & Reel
Power Dissipation143 W
Rds On Max13.9 mΩ
Schedule B8541290080
Threshold Voltage3 V
Turn-Off Delay Time42 ns
Turn-On Delay Time18 ns
Dimensions
Height2.52 mm
Datenblätter und Dokumente
Laden Sie Datenblätter und Herstellerdokumentation für Infineon IRFR4510TRPBF herunter.
Compliance
Umweltklassifizierung
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance-Erklärungen