Infineon IRFH5220TRPBF
Obsolete
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
Alternative Teile
Dieser Teil
Alternative Teile
Price @ 1000
$ 2.049
Stock
151,118
61,509
Authorized Distributors
0
1
Mount
Surface Mount
Surface Mount
Case/Package
VQFN
VQFN
Drain to Source Voltage (Vdss)
200 V
200 V
Continuous Drain Current (ID)
3.8 A
3.8 A
Threshold Voltage
-
-
Rds On Max
99.9 mΩ
99.9 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
3.6 W
3.6 W
Input Capacitance
1.38 nF
1.38 nF
Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-12-21
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2016-12-02
LTD Date2017-09-02
Verwandte Teile
InfineonIRFH5020TRPBF
Single N-Channel 200 V 55 mOhm 36 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm
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25V Single N-Channel HEXFET Power MOSFET in a 2mm X 2mm PQFN package, PG-TSDSON-6, RoHS
InfineonIRFH5025TRPBF
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InfineonIRFH5015TR2PBF
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Beschreibungen
Beschreibungen von Infineon IRFH5220TRPBF, die von den Distributoren bereitgestellt werden.
200V Single N-Channel HEXFET Power MOSFET in a PQFN 5x6mm package, PG-TDSON-8, RoHS
Infineon SCT
Trans MOSFET N-CH 200V 3.8A 8-Pin PQFN EP T/R
HEXFET POWER MOSFET Power Field-Effect Transistor, 3.8A I(D), 200V, 0.0999ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
N CH MOSFET, 200V, 3.8A, 8-PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:3.8A; Drain Source Voltage Vds:200V; On Resistance Rds(on):80mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; No. of Pins:8 ;RoHS Compliant: Yes
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Technische Spezifikationen
Physical
Case/PackageVQFN
MountSurface Mount
Number of Pins8
Number of Terminals5
Technical
Continuous Drain Current (ID)3.8 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance99.9 mΩ
Drain to Source Voltage (Vdss)200 V
Fall Time3.4 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.38 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation8.3 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance99.9 mΩ
Package Quantity4000
PackagingTape & Reel
Power Dissipation3.6 W
Rds On Max99.9 mΩ
Rise Time4.7 ns
Turn-Off Delay Time14 ns
Turn-On Delay Time7.2 ns
Compliance
Umweltklassifizierung
China RoHSCompliant
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance-Erklärungen