Infineon IRFH5015TR2PBF
$ 1.931
Obsolete
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RS (Formerly Allied Electronics) | IRFH5015TR2PBF | 0 | 400 | Bulk | 15h | |||||||
| Avnet | IRFH5015TR2PBF | 0 | 400 | 2d | ||||||||
| Farnell | IRFH5015TR2PBF | 0 | 1 | 23h | ||||||||
| Microchip USA | IRFH5015TR2PBF | 299 | 150 | Tray | 2d | |||||||
| Win Source | WS-IRFH5015TR2PBF | 4.650 | 22 | 23h |
Datenblätter und Dokumente
Laden Sie Datenblätter und Herstellerdokumentation für Infineon IRFH5015TR2PBF herunter.
Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-01-22
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2014-05-12
LTD Date2014-11-12
Verwandte Teile
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Beschreibungen
Beschreibungen von Infineon IRFH5015TR2PBF, die von den Distributoren bereitgestellt werden.
MOSFET N-CH 150V 10A 8VQFN / N-Channel 150 V 10A (Ta), 56A (Tc) Surface Mount 8-PQFN (5x6)
150V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package
MOSFET, N-Channel, 150V, 56A, 31 mOhm, 33 nC Qg, PQFN
Trans MOSFET N-CH 150V 10A 8-Pin PQFN T/R
MOSFET, N CH, 150V, 56A, PQFN56; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:150V; On Resistance Rds(on):25.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:250W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PQFN; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:56A; Power Dissipation Pd:250W; Voltage Vgs Max:20V
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Technische Spezifikationen
Physical
Case/PackageVQFN
MountSurface Mount
Number of Pins8
Number of Terminals5
Technical
Continuous Drain Current (ID)10 A
Drain to Source Breakdown Voltage150 V
Drain to Source Resistance31 mΩ
Drain to Source Voltage (Vdss)150 V
Element ConfigurationSingle
Fall Time3.4 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.3 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation250 W
Min Breakdown Voltage150 V
Min Operating Temperature-55 °C
Nominal Vgs5 V
Number of Channels1
Number of Elements1
Power Dissipation3.6 W
Rds On Max31 mΩ
Recovery Time78 ns
Resistance31 MΩ
Rise Time9.7 ns
Threshold Voltage5 V
Turn-Off Delay Time14 ns
Turn-On Delay Time9.4 ns
Dimensions
Height1.05 mm
Length6.1468 mm
Width5.15 mm
Datenblätter und Dokumente
Laden Sie Datenblätter und Herstellerdokumentation für Infineon IRFH5015TR2PBF herunter.