Infineon IRFH5210TR2PBF
$ 0.69
Obsolete
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RS (Formerly Allied Electronics) | IRFH5210TR2PBF | 0 | 800 | Bulk | 10h | |||||||
| Avnet | IRFH5210TR2PBF | 0 | 800 | 2d | ||||||||
| Farnell | IRFH5210TR2PBF | 0 | 1 | Cut Tape | 17h | |||||||
| Microchip USA | IRFH5210TR2PBF | 125 | 150 | Tray | 11h | |||||||
| Component Stockers USA | IRFH5210TR2PBF | 18.365 | 2d |
Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-04-12
Lifecycle StatusObsolete (Last Updated: 4 months ago)
Verwandte Teile
InfineonIRFH5110TRPBF
Single N-Channel 100 V 12.4 mOhm 48 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm
InfineonIRFH7110TRPBF
100V Single N-Channel HEXFET Power MOSFET in a PQFN 5x6 package, PG-TDSON-8, RoHS
Beschreibungen
Beschreibungen von Infineon IRFH5210TR2PBF, die von den Distributoren bereitgestellt werden.
100V Single N-Channel HEXFET Power MOSFET in a PQFN package
MOSFET, 100V, 55A, 14.9 mOhm, 39 nC Qg, PQFN 5x6
Trans MOSFET N-CH 100V 10A 8-Pin PQFN EP T/R
MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id:55A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0126ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:2V ;RoHS Compliant: Yes
MOSFET,N CH,100V,55A,PQFN56; Transistor Polarity:N Channel; Drain Source Voltage Vds:100V; On Resistance Rds(on):12.6mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:3.6W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:QFN; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:55A; Power Dissipation Pd:3.6W; Voltage Vgs Max:20V
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Technische Spezifikationen
Physical
Case/PackageQFN
MountSurface Mount
Number of Pins8
Number of Terminals5
Technical
Continuous Drain Current (ID)10 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance14.9 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time6.5 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.57 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation104 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs2 V
Number of Channels1
Number of Elements1
Power Dissipation3.6 W
Rds On Max14.9 mΩ
Recovery Time44 ns
Resistance14.9 MΩ
Rise Time9.7 ns
Threshold Voltage2 V
Turn-Off Delay Time21 ns
Turn-On Delay Time7.2 ns
Dimensions
Height900 µm
Length5.9944 mm
Width5 mm
Compliance
Umweltklassifizierung
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance-Erklärungen