Infineon IRFHM9331TR2PBF
Obsolete
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RS (Formerly Allied Electronics) | IRFHM9331TR2PBF | 0 | 1600 | Bulk | 8h | |||||||
| Microchip USA | IRFHM9331TR2PBF | 369 | 300 | Tray | 6d | |||||||
| Component Stockers USA | IRFHM9331TR2PBF | 643 | >1wk | |||||||||
| Win Source | WS-IRFHM9331TR2PBF | 11.050 | 9 | 19h | ||||||||
| Worldway Electronics | IRFHM9331TR2PBF | 12.931 | 7 | Tape & Reel | 18h |
Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-06-30
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2014-05-12
LTD Date2014-11-12
Verwandte Teile
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30V Single N-Channel HEXFET Power MOSFET in a 3mm X 3mm PQFN package, PQFN 3X3 8L, RoHS
InfineonIRFH8334TRPBF
N CH POWER MOSFET, HEXFET, 30V, 14A, PQFN-8; Transistor Polarity:N Channel; Cont
InfineonIRFH8330TRPBF
30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PQFN 5X6 8L, RoHS
Beschreibungen
Beschreibungen von Infineon IRFHM9331TR2PBF, die von den Distributoren bereitgestellt werden.
-30V Single P-Channel HEXFET Power MOSFET in a PQFN 3mm x 3mm package
MOSFET P-CH 30V 11A 3X3 PQFN / Trans MOSFET P-CH 30V 11A 8-Pin PQFN EP T/R
MOSFET, P-CHANNEL, -30V, -11A, 14.6 MOHM, 25VGS, PQFN3X3
MOSFET,P CH,DIODE,30V,11A,PQFN33; Transistor Polarity:P Channel; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.01ohm; Rds(on) Test Voltage Vgs:-20V; Power Dissipation Pd:2.8W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:QFN; No. of Pins:8; SVHC:No SVHC (19-Dec-2011); Current Id Max:-11A; Power Dissipation Pd:2.8W; Voltage Vgs Max:-25V
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Technische Spezifikationen
Physical
Case/PackageQFN
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)11 A
Drain to Source Breakdown Voltage-30 V
Drain to Source Resistance14.6 mΩ
Drain to Source Voltage (Vdss)-30 V
Element ConfigurationSingle
Fall Time60 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance1.543 nF
Max Operating Temperature150 °C
Max Power Dissipation2.8 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs-1.8 V
Number of Elements1
PackagingCut Tape
Power Dissipation2.8 W
Rds On Max10 mΩ
Recovery Time96 ns
Rise Time27 ns
Threshold Voltage-1.8 V
Turn-Off Delay Time72 ns
Turn-On Delay Time11 ns
Dimensions
Height939.8 µm
Length2.9972 mm
Width2.9972 mm