Infineon IRFH5110TR2PBF
$ 1.59
Obsolete
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RS (Formerly Allied Electronics) | IRFH5110TR2PBF | 0 | 800 | Bulk | 21h | |||||||
| Avnet | IRFH5110TR2PBF | 0 | 400 | 10h | ||||||||
| Microchip USA | IRFH5110TR2PBF | 134 | 150 | Tray | 3h | |||||||
| Win Source | WS-IRFH5110TR2PBF | 60.020 | 35 | 9h | ||||||||
| Worldway Electronics | IRFH5110TR2PBF | 18.132 | 7 | Tape & Reel | 8h |
Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-03-18
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2014-05-12
LTD Date2014-11-12
Verwandte Teile
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100V Single N-Channel HEXFET Power MOSFET in a PQFN 5x6 package, PG-TDSON-8, RoHS
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75V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHS
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onsemiNTL4502NT1
Non-Compliant Surface Mount 6 ns Contains Lead Tape & Reel (TR) 28 ns 11 mΩ QFN
Beschreibungen
Beschreibungen von Infineon IRFH5110TR2PBF, die von den Distributoren bereitgestellt werden.
100V Single N-Channel HEXFET Power MOSFET in a PQFN package
HEXFET POWER MOSFET Power Field-Effect Transistor, 11A I(D), 100V, 0.0124ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET,N CH,100V,11A,PQFN56; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:100V; On Resistance Rds(on):10.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:114W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:QFN; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:63A; Power Dissipation Pd:114W; Voltage Vgs Max:20V
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Technische Spezifikationen
Physical
Case/PackageQFN
MountSurface Mount
Number of Pins8
Number of Terminals5
Technical
Continuous Drain Current (ID)11 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance12.4 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time6.4 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.152 nF
Max Operating Temperature150 °C
Max Power Dissipation114 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Elements1
Power Dissipation114 W
Rds On Max12.4 mΩ
Recovery Time51 ns
Rise Time9.6 ns
Threshold Voltage4 V
Turn-Off Delay Time22 ns
Turn-On Delay Time7.8 ns
Dimensions
Height838.2 µm
Length5.9944 mm
Width5 mm
Compliance
Umweltklassifizierung
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance-Erklärungen