Infineon IRFH5207TR2PBF
$ 1.3
Obsolete
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RS (Formerly Allied Electronics) | IRFH5207TR2PBF | 0 | 800 | Bulk | 12h | |||||||
| Avnet | IRFH5207TR2PBF | 0 | 800 | 2d | ||||||||
| Farnell | IRFH5207TR2PBF | 0 | 1 | 19h | ||||||||
| Microchip USA | IRFH5207TR2PBF | 245 | 150 | Tray | 14h | |||||||
| Worldway Electronics | IRFH5207TR2PBF | 17.500 | 7 | Tape & Reel | 19h |
Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-04-12
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2014-05-12
LTD Date2014-11-12
Verwandte Teile
InfineonIRFH7107TRPBF
75V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHS
InfineonIRFH5206TRPBF
60V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHS
InfineonIRFH5206TR2PBF
MOSFET N-CH 60V 16A 5X6 PQFN / N-Channel 60 V 16A (Ta), 89A (Tc) Surface Mount 8-PQFN (5x6)
Beschreibungen
Beschreibungen von Infineon IRFH5207TR2PBF, die von den Distributoren bereitgestellt werden.
75V Single N-Channel HEXFET Power MOSFET in a PQFN package
Trans MOSFET N-CH 75V 13A 8-Pin QFN T/R
MOSFET PQFN-8 (5x6) N 75V 13 A
MOSFET 75V, Gen 10.7, 10.11 mOhm max, 43.5 nC Qg
Power Field-Effect Transistor, 13A I(D), 75V, 0.0096ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET,N CH,75V,71A,PQFN56; Transistor Polarity:N Channel; Drain Source Voltage Vds:75V; On Resistance Rds(on):8mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:3.6W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:QFN; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:71A; Power Dissipation Pd:3.6W; Voltage Vgs Max:20V
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Technische Spezifikationen
Physical
Case/PackageQFN
MountSurface Mount
Number of Pins8
Number of Terminals5
Technical
Continuous Drain Current (ID)13 A
Drain to Source Breakdown Voltage75 V
Drain to Source Resistance9.6 mΩ
Drain to Source Voltage (Vdss)75 V
Element ConfigurationSingle
Fall Time7.1 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.474 nF
Max Operating Temperature150 °C
Max Power Dissipation105 W
Min Breakdown Voltage75 V
Min Operating Temperature-55 °C
Nominal Vgs2 V
Number of Elements1
Power Dissipation3.6 W
Rds On Max9.6 mΩ
Recovery Time39 ns
Rise Time12 ns
Threshold Voltage2 V
Turn-Off Delay Time20 ns
Turn-On Delay Time7.2 ns
Dimensions
Height838.2 µm
Length5.9944 mm
Width5 mm
Compliance
Umweltklassifizierung
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance-Erklärungen