Infineon IRF9Z24NSPBF
$ 0.604
Obsolete
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Price @ 1000
$ 0.604
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Stock
546,779
401,980
Authorized Distributors
3
3
Mount
Surface Mount
Surface Mount
Case/Package
DPAK
D2PAK
Drain to Source Voltage (Vdss)
-55 V
-55 V
Continuous Drain Current (ID)
12 A
12 A
Threshold Voltage
-4 V
4 V
Rds On Max
175 mΩ
175 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
3.8 W
3.8 W
Input Capacitance
350 pF
350 pF
Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2005-04-25
Lifecycle StatusObsolete (Last Updated: 4 months ago)
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Beschreibungen
Beschreibungen von Infineon IRF9Z24NSPBF, die von den Distributoren bereitgestellt werden.
-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Trans MOSFET P-CH 55V 12A 3-Pin(2+Tab) D2PAK
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET
MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-55V; Continuous Drain Current, Id:-12A; On Resistance, Rds(on):175mohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:D2-PAK ;RoHS Compliant: Yes
MOSFET, P, D2-PAK; Transistor Polarity:P Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:55V; On Resistance Rds(on):175mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-4V; Power Dissipation Pd:45W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D2-PAK; Current Id Max:-12A; Current Temperature:25°C; External Depth:15.49mm; External Length / Height:4.69mm; External Width:10.54mm; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:175°C; Junction Temperature Tj Min:-55°C; No. of Transistors:1; Package / Case:D2-PAK; Power Dissipation Pd:45W; Power Dissipation Pd:45W; Power Dissipation on 1 Sq. PCB:3.8W; Pulse Current Idm:48A; SMD Marking:F9Z24NS; Termination Type:SMD; Voltage Vds Typ:55V; Voltage Vgs Max:-4V; Voltage Vgs Rds on Measurement:10V
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
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Technische Spezifikationen
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)12 A
Drain to Source Breakdown Voltage-55 V
Drain to Source Resistance175 mΩ
Drain to Source Voltage (Vdss)-55 V
Dual Supply Voltage55 V
Element ConfigurationSingle
Fall Time37 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance350 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature150 °C
Max Power Dissipation45 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Nominal Vgs-4 V
Number of Channels1
Number of Elements1
On-State Resistance175 mΩ
Package Quantity1000
Power Dissipation3.8 W
Rds On Max175 mΩ
Rise Time55 ns
Threshold Voltage-4 V
Turn-Off Delay Time23 ns
Turn-On Delay Time13 ns
Dimensions
Height4.83 mm
Length10.67 mm
Width10.54 mm
Compliance
Umweltklassifizierung
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance-Erklärungen