Infineon IRF9Z24NSTRLPBF
$ 0.875
Obsolete
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Rochester Electronics | IRF9Z24NSTRLPBF | 194 | 18h | |||||||||
| RS (Formerly Allied Electronics) | IRF9Z24NSTRLPBF | 0 | 10 | Bulk | 7h | |||||||
| Farnell | IRF9Z24NSTRLPBF | 0 | 1 | 18h | ||||||||
| Weyland Electronics Group Pte. Ltd. | IRF9Z24NSTRLPBF | 6.890 | 1 | Tape & Reel | 19h | |||||||
| Win Source | WS-IRF9Z24NS | 13.722 | 40 | 18h |
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3-Monats-Trend: +0.00%
CAD-Modelle
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Price @ 1000
$ 0.875
$ 0.604
Stock
345,241
151,251
Authorized Distributors
3
3
Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
DPAK
Drain to Source Voltage (Vdss)
-55 V
-55 V
Continuous Drain Current (ID)
12 A
12 A
Threshold Voltage
4 V
-4 V
Rds On Max
175 mΩ
175 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
3.8 W
3.8 W
Input Capacitance
350 pF
350 pF
Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1997-06-04
Lifecycle StatusObsolete (Last Updated: 4 months ago)
Verwandte Teile
onsemiNTB18N06T4
Tape & Reel (TR) Surface Mount N-Channel Single Mosfet Transistor 15A Tc 15A 48.4W 13ns
InfineonIRF3205SPBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 8 Milliohms;ID 110A;D2Pak;PD 200W;VGS +/-20V
Beschreibungen
Beschreibungen von Infineon IRF9Z24NSTRLPBF, die von den Distributoren bereitgestellt werden.
Single P-Channel 55 V 0.175 Ohm 19 nC HEXFET® Power Mosfet - D2PAK
Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A) | MOSFET P-CH 55V 12A D2PAK
-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Trans MOSFET P-CH 55V 12A 3-Pin(2+Tab) D2PAK T/R
MOSFET, P-CHANNEL, -55V, -12A, 175 MOHM, 12.7 NC QG, D2-PAK
MOSFET, P, 55V, D2-PAK; Transistor Type:MOSFET; Transistor Polarity:P; Voltage, Vds Typ:-55V; Current, Id Cont:12A; Resistance, Rds On:0.175ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:D2-PAK; Termination Type:SMD; Alternate Case Style:TO-262AB; Current, Idm Pulse:48A; Power, Pd:45W; Voltage, Vds Max:55V; Voltage, Vgs th Max:4V; Voltage, Vgs th Min:2V
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Bestandsverlauf
3-Monats-Trend: +0.00%
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Symbol, Footprint und 3D STEP herunterladen
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Technische Spezifikationen
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)12 A
Current Rating-12 A
Drain to Source Breakdown Voltage-55 V
Drain to Source Resistance175 mΩ
Drain to Source Voltage (Vdss)-55 V
Dual Supply Voltage-55 V
Fall Time37 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance350 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature150 °C
Max Power Dissipation45 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
On-State Resistance175 mΩ
Package Quantity800
PackagingBulk
Power Dissipation3.8 W
Rds On Max175 mΩ
Rise Time55 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage4 V
Turn-Off Delay Time23 ns
Turn-On Delay Time13 ns
Voltage Rating (DC)-55 V
Dimensions
Height5.084 mm
Length10.668 mm
Width9.65 mm
Compliance
Umweltklassifizierung
China RoHSNon-Compliant
Lead FreeContains Lead
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance-Erklärungen