Infineon IRF9130
$ 19.613
Production
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
Bestandsverlauf
3-Monats-Trend: -34.35%
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Price @ 1000
$ 19.613
$ 52.8
$ 52.8
Stock
7,433
15,978
15,978
Authorized Distributors
3
1
1
Mount
Through Hole
Through Hole
Through Hole
Case/Package
TO-3
TO-3
TO-3
Drain to Source Voltage (Vdss)
-100 V
-
-
Continuous Drain Current (ID)
11 A
11 A
11 A
Threshold Voltage
-4 V
-
-
Rds On Max
-
-
-
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
75 W
75 W
75 W
Input Capacitance
-
-
-
Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1990-01-01
Lifecycle StatusProduction (Last Updated: 4 months ago)
Verwandte Teile
InfineonJANTX2N6770
Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
Beschreibungen
Beschreibungen von Infineon IRF9130, die von den Distributoren bereitgestellt werden.
Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
-100V Single P-Channel Hi-Rel MOSFET in a TO-204AA package, TO-204AA-2
Infineon SCT
100V, P-CHANNEL REPETITIVE AVALANCHE AND DV/DT RATED HEXFET TRANSISTOR Power Field-Effect Transistor, 11A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA
MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-100V; Continuous Drain Current, Id:-11A; On Resistance, Rds(on):0.3ohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:TO-204AA ;RoHS Compliant: No
MOSFET, P, TO-3; Transistor Polarity:P Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:100V; On Resistance Rds(on):300mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-4V; Power Dissipation Pd:75W; Transistor Case Style:TO-3; No. of Pins:2; SVHC:No SVHC (20-Jun-2011); Avalanche Single Pulse Energy Eas:81mJ; Current Iar:11A; Current Id Max:-11A; Current Temperature:25°C; Fixing Centres:30mm; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Lead Spacing:11mm; No. of Transistors:1; Package / Case:TO-3; Power Dissipation Pd:75W; Power Dissipation Pd:75W; Pulse Current Idm:50A; Repetitive Avalanche Energy Max:7.5mJ; Termination Type:Through Hole; Voltage Vds Typ:-100V; Voltage Vgs Max:-4V; Voltage Vgs Rds on Measurement:-10V; Voltage Vgs th Max:-4V; Weight:0.012kg
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Bestandsverlauf
3-Monats-Trend: -34.35%
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Symbol, Footprint und 3D STEP herunterladen
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Technische Spezifikationen
Physical
Body MaterialMetal
Case/PackageTO-3
MountThrough Hole
Number of Pins2
Number of Terminals2
Weight12 g
Technical
Continuous Drain Current (ID)11 A
Drain to Source Breakdown Voltage-100 V
Drain to Source Resistance350 mΩ
Drain to Source Voltage (Vdss)-100 V
Dual Supply Voltage-100 V
Gate to Source Voltage (Vgs)20 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation75 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs-4 V
Number of Channels1
Number of Elements1
On-State Resistance300 mΩ
Power Dissipation75 W
Schedule B8541290080
TerminationThrough Hole
Threshold Voltage-4 V
Turn-Off Delay Time140 ns
Turn-On Delay Time60 ns
Dimensions
Height7.74 mm
Lead Pitch11 mm
Compliance
Umweltklassifizierung
Radiation HardeningNo
REACH SVHCYes
RoHSNon-Compliant
Compliance-Erklärungen