Infineon IRF230
$ 18.605
Production
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
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Dieser Teil
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Price @ 1000
$ 18.605
$ 32.955
Stock
31,057
71
Authorized Distributors
2
2
Mount
Through Hole
Through Hole
Case/Package
TO-3
TO-3
Drain to Source Voltage (Vdss)
200 V
-
Continuous Drain Current (ID)
9 A
9 A
Threshold Voltage
-
-
Rds On Max
-
-
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
75 W
75 W
Input Capacitance
-
-
Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1990-01-01
Lifecycle StatusProduction (Last Updated: 4 months ago)
Beschreibungen
Beschreibungen von Infineon IRF230, die von den Distributoren bereitgestellt werden.
Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
Single N-Channel 200 V 75 W 39 nC Hexfet Transistores Through Hole - TO-204AA/AE
Power Field-Effect Transistor, 9A I(D), 200V, 0.49ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA
MOSFET, N, TO-3; Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:200V; On Resistance Rds(on):400mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:75W; Transistor Case Style:TO-3; No. of Pins:2; SVHC:No SVHC (20-Jun-2011); Avalanche Single Pulse Energy Eas:54mJ; Current Iar:9A; Current Id Max:9A; Current Temperature:25°C; Fixing Centres:30mm; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Lead Spacing:11mm; No. of Transistors:1; Package / Case:TO-3; Power Dissipation Pd:75W; Power Dissipation Pd:75W; Pulse Current Idm:36A; Repetitive Avalanche Energy Max:7.5mJ; Termination Type:Through Hole; Voltage Vds Typ:200V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Weight:0.01kg
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Technische Spezifikationen
Physical
Body MaterialMetal
Case/PackageTO-3
MountThrough Hole
Number of Pins2
Number of Terminals2
Weight10 g
Technical
Continuous Drain Current (ID)9 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance490 mΩ
Drain to Source Voltage (Vdss)200 V
Dual Supply Voltage200 V
Gate to Source Voltage (Vgs)20 V
Max Operating Temperature150 °C
Max Power Dissipation75 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Elements1
On-State Resistance400 mΩ
Power Dissipation75 W
TerminationThrough Hole
Dimensions
Lead Pitch11 mm
Compliance
Umweltklassifizierung
Lead FreeContains Lead
Radiation HardeningNo
REACH SVHCYes
RoHSNon-Compliant
Compliance-Erklärungen