STMicroelectronics STB35N60DM2

Name: STMicroelectronics STB35N60DM2
Brand: STMicroelectronics
SKU: STB35N60DM2

N-channel 600 V, 0.094 Ohm typ., 28 A MDmesh DM2 Power MOSFETs in D2PAK package

$ 2.875

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Distributor		SKU		Min	Pkg
TME	2	STB35N60DM2-STM-0	2,000	1K					3.020	3.020	4h
Newark		STB35N60DM2	0	1	Cut Tape	7.110	5.120	3.990	3.960	3.960
Avnet		STB35N60DM2	0	1K					2.381	2.280	5d
Future Electronics	2	STB35N60DM2	0	1	Cut Tape	3.450	3.350	3.280	3.140	3.140
Arrow Electronics		STB35N60DM2	0	1K					2.875	2.707

数据表和文档

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Future Electronics

Datasheet15 页10 年前

Newark

库存历史记录

3 个月趋势:

+0.00%

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供应链

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2015-09-14

Lifecycle StatusProduction (Last Updated: 4 months ago)

描述

由其分销商提供的 STMicroelectronics STB35N60DM2 的描述。

N-channel 600 V, 0.094 Ohm typ., 28 A MDmesh DM2 Power MOSFETs in D2PAK package

STMicroelectronics

MOSFET N-CH 600V 28A D2PAK / N-Channel 600 V 28A (Tc) 210W (Tc) Surface Mount D²PAK (TO-263)

Win Source

N-Channel 600 V 110 mOhm Surface Mount DM2 Power Mosfet - D2PAK

Future Electronics

210W(Tc) 25V 5V@ 250¦ÌA 54nC@ 10 V 1N 600V 110m¦¸@ 14A,10V 28A 2.4nF@100V D2PAK,TO-263

Unikeyic (ICkey)

Trans MOSFET N-CH 600V 28A 3-Pin(2+Tab) D2PAK T/R

Verical

Power Field-Effect Transistor, 28A I(D), 600V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

IHS

MOSFET, N-CH, 600V, 28A, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 28A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.094ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 210W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015)

Farnell