价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DigiKey | SIHB33N60EF-GE3-ND | 966 | 1 | Bulk | ||||||||
| TTI | SIHB33N60EF-GE3 | 2,000 | 25 | Tube | 4h | |||||||
| TME | SIHB33N60EF-GE3 | 0 | 1 | 16h | ||||||||
| Avnet | SIHB33N60EF-GE3 | 0 | 1K | 1d | ||||||||
| Future Electronics | SIHB33N60EF-GE3 | 0 | 1K | Tape & Reel |
供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2014-11-19
Lifecycle StatusProduction (Last Updated: 4 months ago)
相关零件
STMicroelectronicsSTB40N60M2
N-channel 600 V, 0.078 Ohm typ., 34 A MDmesh M2 Power MOSFET in D2PAK package
VishaySIHB28N60EF-GE3
MOSFET N-CH 600V 28A D2PAK / N-Channel 600 V 28A (Tc) 250W (Tc) Surface Mount D2PAK
STMicroelectronicsSTB42N60M2-EP
N-channel 600 V, 0.076 Ohm typ., 34 A MDmesh M2 EP Power MOSFET in a D2PAK package
描述
由其分销商提供的 Vishay SIHB33N60EF-GE3 的描述。
600V 33A 98m´Î@10V16.5A 278W 4V@250Ã×A N Channel D2PAK(TO-263) MOSFETs ROHS
278W(Tc) 30V 4V@ 250¦ÌA 155nC@ 10 V 1N 600V 98m¦¸@ 16.5A,10V 33A 3.454nF@100V D2PAK,TO-263 4.83mm
600V, 33A, 98MOHM, D2PAK, EF SERIES
Power Field-Effect Transistor, 33A I(D), 600V, 0.098ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
制造商别名
Vishay 在全球拥有多个品牌，分销商可将其用作替代名称。Vishay 也可称为以下名称：
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- Vishay Polytech
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
技术规格
Physical
Case/PackageTO-263-3
MountSurface Mount
Number of Terminals2
Weight1.946308 g
Technical
Continuous Drain Current (ID)33 A
Drain to Source Resistance98 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time48 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.454 nF
Max Operating Temperature150 °C
Max Power Dissipation278 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Rds On Max98 mΩ
Rise Time43 ns
Turn-Off Delay Time161 ns
Turn-On Delay Time28 ns
Dimensions
Height4.83 mm
Length10.67 mm
Width9.65 mm