onsemi HUF75345S3ST

Name: onsemi HUF75345S3ST
Brand: onsemi
SKU: HUF75345S3ST

Transistor, Mosfet, N-channel, 55V V(br)dss, 75A I(d), TO-263AB

$ 3.462

Production

制造商页面数据表

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Distributor		SKU		Min	Pkg
DigiKey	3	HUF75345S3STCT-ND	1,881	1	Cut Tape	8.180	5.552	4.062	4.062	4.062
Newark	2	HUF75345S3ST	0	1	Cut Tape	8.950	6.540	5.310	5.170	5.050
Onlinecomponents.com		HUF75345S3ST	0	200	Bulk				3.210	3.210
Future Electronics		HUF75345S3ST	0	800	Tape & Reel				4.700	4.700
Master Electronics		HUF75345S3ST	0	200					3.210	3.210

数据表和文档

下载 onsemi HUF75345S3ST 的数据表和制造商文档。

Upverter

Technical Drawing1 页5 年前

IHS

Master Electronics

onsemi

Factory Futures

库存历史记录

3 个月趋势:

-3.10%

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onsemiHUF75345S3ST

onsemiHUF75345S3ST_NL

Price @ 1000

$ 3.462

$ 1.53

Stock

98,913

19,489

Authorized Distributors

Mount

Surface Mount

Case/Package

TO-263-3

D2PAK

Drain to Source Voltage (Vdss)

55 V

Continuous Drain Current (ID)

75 A

Threshold Voltage

Rds On Max

7 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

325 W

Input Capacitance

4 nF

供应链

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2000-03-01

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

描述

由其分销商提供的 onsemi HUF75345S3ST 的描述。

TRANSISTOR,MOSFET,N-CHANNEL,55V V(BR)DSS,75A I(D),TO-263AB

Newark

N-Channel 55 V 0.007 Ohm Surface Mount UltraFET Power Mosfet - TO-263AB

Future Electronics

N-Channel UltraFET Power MOSFET 55V, 75A, 7mΩ

onsemi

325W(Tc) 20V 4V@ 250¦ÌA 275nC@ 20 V 1N 55V 7m¦¸@ 75A,10V 75A 4nF@25V D2PAK,TO-263 5.08mm

UnikeyIC

Trans MOSFET N-CH 55V 75A 3-Pin(2+Tab) D2PAK T/R

Verical

Power Field-Effect Transistor, 75A I(D), 55V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Semicontronic

These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.

Fairchild Semiconductor