价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Verical | HUF75344S3ST | 27,327 | 355 | |||||||||
| Rochester Electronics | HUF75344S3ST | 41,485 | 18h | |||||||||
| Microchip USA | HUF75344S3ST | 108 | 600 | Bulk | 11h | |||||||
| Win Source | WS-148970 | 32,560 | 90 | 19h | ||||||||
| Worldway Electronics | HUF75344S3ST | 15,265 | 7 | Bulk | 18h |
供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-01-20
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2009-03-09
LTD Date2009-09-09
相关零件
InfineonIPB80N06S407ATMA2
60V, N-Ch, 7.1 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™-T2, PG-TO263-3, RoHS
InfineonIPB80N06S208ATMA2
55V, N-Ch, 7.7 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™, PG-TO263-3, RoHS
InfineonIPB80N06S207ATMA4
55V, N-Ch, 6.3 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™, PG-TO263-3, RoHS
描述
由其分销商提供的 onsemi HUF75344S3ST 的描述。
PWR MOS ULTRAFET 55V/75A/0.008 OHM N-CHANNEL TO-263AB T&R
75 A 55 V 0.008 ohm N-CHANNEL Si POWER MOSFET TO-263AB
MOSFET N-CH 55V 75A D2PAK
Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
N-CHANNEL POWER MOSFET
MISCELLANEOUS MOSFETS;
MOSFETs 55V, Single
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-263
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)75 A
Current Rating75 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance8 mΩ
Drain to Source Voltage (Vdss)55 V
Element ConfigurationSingle
Fall Time57 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.2 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation285 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation285 W
Rds On Max8 mΩ
Rise Time125 ns
Turn-Off Delay Time46 ns
Turn-On Delay Time13 ns
Voltage Rating (DC)55 V
Dimensions
Height5.08 mm