相关零件
InfineonIPB80N06S407ATMA2
60V, N-Ch, 7.1 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™-T2, PG-TO263-3, RoHS
InfineonIPB80N06S207ATMA4
55V, N-Ch, 6.3 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™, PG-TO263-3, RoHS
描述
由其分销商提供的 onsemi HUFA75344S3ST 的描述。
75 A 55 V 0.008 ohm N-CHANNEL Si POWER MOSFET TO-263AB
MOSFET N-CH 55V 75A D2PAK
MOSFETs 75a,55V,0.008Ohm,NCh UltraFET
Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
N-CHANNEL POWER MOSFET
MISCELLANEOUS MOSFETS;
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-263-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)75 A
Current Rating75 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance8 mΩ
Drain to Source Voltage (Vdss)55 V
Element ConfigurationSingle
Fall Time57 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.2 nF
Max Operating Temperature175 °C
Max Power Dissipation285 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation285 W
Rds On Max8 mΩ
Rise Time125 ns
Turn-Off Delay Time46 ns
Voltage Rating (DC)55 V